银纳米颗粒纹理对改进光电探测的铝纳米线的影响

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-11 DOI:10.1109/LED.2024.3478387

Abhijit Das;Avijit Dalal;Aniruddha Mondal;Laishram Robindro Singh;Mitra Barun Sarkar

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引用次数: 0

摘要

这项研究利用闪烁角沉积（GLAD）方法，在正硅衬底上生长出 Al2O3 纳米线（NW）器件和银纳米粒子（NP）纹理 Al2O3 NW 器件。GLAD 工艺的阴影效应促进了拟议纳米结构的生长。通过独立的晶体学研究确定了多晶晶体结构。在 Al2O3 NW 上制备 Ag NP 后，观察到其光学吸收和拉曼发射均有所改善。在 Al2O3 NW 上进行银制备大大提高了最重要的光检测参数，包括光敏度、响应度、量子效率、检测度和噪声功率等效（NEP）。光检测参数的整体改善主要归功于 Ag NP 通过局部表面等离子体共振（LSPR）增强了光电流。使用 Ag NP 的拟议器件还表现出了超快的光响应。因此，研究结果表明，Ag NP 纹理的 Al2O3 NW 器件是高速光电检测应用的可行选择。

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Effect of Ag Nanoparticle Texturing on Al₂O₃ Nanowires for Improved Photodetection

This work utilized the glancing angle deposition (GLAD) method to grow an Al2O3 nanowires (NW) device and an Ag nanoparticles (NP) textured Al2O3 NW device on an n-Si substrate. The growth of the proposed nanostructures is facilitated by virtue of the shadowing effect of the GLAD process. The polycrystalline crystal structure was determined through independent crystallographic investigations. After Ag NP texturing on Al2O3 NW, an improvement in optical absorption and Raman emission was observed. Ag texturing on Al2O3 NW considerably improved the most important photodetection parameters, including photosensitivity, responsivity, quantum efficiency, detectivity, and noise equivalent of power (NEP). This overall improvement in the photodetection parameters is primarily due to the enhancement in the photocurrent by localized surface plasmon resonance (LSPR) exhibited by Ag NP. The proposed device with Ag NP also exhibited an ultrafast photo response. Therefore, the finding reveals that the Ag NP textured Al2O3 NW device is a feasible option for high-speed photodetection applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.