具有各向异性相界 (MPB) 的铁电薄膜电容器的 HZO/ZrO₂/HZO 超层压技术，用于实现高电容比和无损读出

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-24 DOI:10.1109/LED.2024.3485916

Z.-F. Lou;B.-R. Chen;K.-Y. Hsiang;Y.-T. Chang;C.-H. Liu;H.-C. Tseng;H.-T. Liao;P. Su;M. H. Lee

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引用次数: 0

摘要

在铁电电容式存储器（FCM）中采用了具有各向形态相边界（MPB）的高锆浓度超层压（SL）HZO/ZrO2/HZO（HZZ），从而将介电常数提高到 46，2Pr 达到 $44~mu $ C/cm2。所提出的 HZZ Memcapacitor 在 3 V 电压下的 CHCS/CLCS 比值高达 245 倍，数据保留时间大于 104 秒，具有多层单元 (MLC)，并实现了 109 个周期的无损读操作 (NDRO)。基于 MPB 的 HZZ SL 技术是一个很有前途的概念，它提高了 FCM/内存电容器非易失性存储器 (NVM) 或先进逻辑应用的介电常数。

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Super-Lamination HZO/ZrO₂/HZO of Ferroelectric Memcapacitors With Morphotropic Phase Boundary (MPB) for High Capacitive Ratio and Non-Destructive Readout

High Zr concentration of super-lamination (SL) HZO/ZrO2/HZO (HZZ) with morphotropic phase boundary (MPB) to enhance dielectric constant to 46 and 2Pr of

$44~\mu $

C/cm2 is employed in ferroelectric capacitive memory (FCM). The proposed HZZ memcapacitor demonstrates a remarkably high CHCS/CLCS ratio of 245x with 3 V, excellent data retention >104 s, multi-level cell (MLC), and achieves non-destructive read operation (NDRO) for 109 cycles. The MPB-based SL technique for HZZ is a promising concept that elevates the permittivity for FCM/memcapacitor non-volatile memory (NVM) or advanced logic applications.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.