界面工程对透明 Hf₀.₅Zr₀.₅O₂ 铁电电容器铁电性的影响

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-23 DOI:10.1109/LED.2024.3485077

Shuning Zhang;Fansen Cao;Haoyu Lu;Yingfen Wei;Xuanyu Zhao;Hao Jiang;Xiaobing Yan;Qi Liu

{"title":"界面工程对透明 Hf₀.₅Zr₀.₅O₂ 铁电电容器铁电性的影响","authors":"Shuning Zhang;Fansen Cao;Haoyu Lu;Yingfen Wei;Xuanyu Zhao;Hao Jiang;Xiaobing Yan;Qi Liu","doi":"10.1109/LED.2024.3485077","DOIUrl":null,"url":null,"abstract":"In this study, we explore the transparent hafnia-based ferroelectric capacitors (FeCaps), employing transparent indium tin oxide (ITO) as the electrode and quartz as substrate. Through interface engineering, involving a Ti interlayer between the ferroelectric Hf\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\nZr\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\nO2 (HZO) film and the electrodes, we not only achieve a substantial enhancement in polarization, but also manage to process within a reduced thermal budget (\n<inline-formula> <tex-math>$350~^{\\text {o}}$ </tex-math></inline-formula>\nC) compatible with back end of line (BEOL). The bottom interface is demonstrated to play the major role in improving the ferroelectric properties. Moreover, the transparent FeCaps exhibit a maximum transmittance of about 90% close to the bare substrate under visible light. These findings pave the way for hafnia-based FeCaps in the future advancement of transparent electronics.","PeriodicalId":13198,"journal":{"name":"IEEE Electron Device Letters","volume":"45 12","pages":"2347-2350"},"PeriodicalIF":4.1000,"publicationDate":"2024-10-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Interface Engineering on Ferroelectricity of Transparent Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitors\",\"authors\":\"Shuning Zhang;Fansen Cao;Haoyu Lu;Yingfen Wei;Xuanyu Zhao;Hao Jiang;Xiaobing Yan;Qi Liu\",\"doi\":\"10.1109/LED.2024.3485077\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this study, we explore the transparent hafnia-based ferroelectric capacitors (FeCaps), employing transparent indium tin oxide (ITO) as the electrode and quartz as substrate. Through interface engineering, involving a Ti interlayer between the ferroelectric Hf\\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\\nZr\\n<inline-formula> <tex-math>$_{{0}.{5}}$ </tex-math></inline-formula>\\nO2 (HZO) film and the electrodes, we not only achieve a substantial enhancement in polarization, but also manage to process within a reduced thermal budget (\\n<inline-formula> <tex-math>$350~^{\\\\text {o}}$ </tex-math></inline-formula>\\nC) compatible with back end of line (BEOL). The bottom interface is demonstrated to play the major role in improving the ferroelectric properties. Moreover, the transparent FeCaps exhibit a maximum transmittance of about 90% close to the bare substrate under visible light. These findings pave the way for hafnia-based FeCaps in the future advancement of transparent electronics.\",\"PeriodicalId\":13198,\"journal\":{\"name\":\"IEEE Electron Device Letters\",\"volume\":\"45 12\",\"pages\":\"2347-2350\"},\"PeriodicalIF\":4.1000,\"publicationDate\":\"2024-10-23\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Electron Device Letters\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10731895/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Electron Device Letters","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10731895/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在这项研究中，我们探索了以透明氧化铟锡（ITO）为电极、石英为衬底的透明铪基铁电容器（FeCaps）。通过在铁电 Hf $_{{0}.{5}}$ Zr $_{{0}.{5}}$ O2 (HZO) 薄膜和电极之间添加一层 Ti 中间膜的界面工程，我们不仅实现了极化的大幅增强，而且还设法在较低的热预算（350~^{text {o}}$ C）内完成了与后端生产线 (BEOL) 兼容的加工。底部界面在改善铁电特性方面发挥了重要作用。此外，透明 FeCaps 在可见光下的最大透射率接近裸衬底的 90%。这些发现为基于铪的铁电体在未来透明电子器件的发展中铺平了道路。

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Interface Engineering on Ferroelectricity of Transparent Hf₀.₅Zr₀.₅O₂ Ferroelectric Capacitors

In this study, we explore the transparent hafnia-based ferroelectric capacitors (FeCaps), employing transparent indium tin oxide (ITO) as the electrode and quartz as substrate. Through interface engineering, involving a Ti interlayer between the ferroelectric Hf

$_{{0}.{5}}$

O2 (HZO) film and the electrodes, we not only achieve a substantial enhancement in polarization, but also manage to process within a reduced thermal budget (

$350~^{\text {o}}$

C) compatible with back end of line (BEOL). The bottom interface is demonstrated to play the major role in improving the ferroelectric properties. Moreover, the transparent FeCaps exhibit a maximum transmittance of about 90% close to the bare substrate under visible light. These findings pave the way for hafnia-based FeCaps in the future advancement of transparent electronics.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.