通过射频磁控管共溅射靶材 In2O3 和 WO3 提高 IWO TFT 器件的均匀性

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-10-10 DOI:10.1109/LED.2024.3477443

Zihan Wang;Feilian Chen;Mingjun Zhang;Xiaoliang Zhou;Paramasivam Balasubramanian;Yan Yan;Meng Zhang

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引用次数: 0

摘要

在这封信中，我们研究了氧化铟钨薄膜晶体管（TFT）均匀性差的原因。IWO 靶材的不均匀性导致钨 (W) 含量大幅波动。为了解决这个问题，采用了 In2O3 和 WO3 靶材的射频磁控管共溅射技术来消除 W 含量的变化，从而获得性能更高的高均匀度 IWO TFT。这种共溅射方法可为缓解大规模生产环境中遇到的器件均匀性难题提供思路，从而大幅降低成本。

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Enhancement of Device Uniformity in IWO TFTs via RF Magnetron Co-Sputtering of In2O3 and WO3 Targets

In this letter, the cause of the poor uniformity in indium tungsten oxide (IWO) thin-film transistors (TFTs) is investigated. The significant fluctuation in tungsten (W) content, which results from the non-uniformity of the IWO target, is responsible. To solve this problem, RF magnetron co-sputtering of In2O3 and WO3 targets is adopted to eliminate the variation of W content, thereby achieving high-uniformity IWO TFTs with enhanced performance. This co-sputtering methodology could shed light on the pathways for mitigating the device uniformity challenges encountered in mass production settings, thus leading to substantial cost reductions.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.