{"title":"煅烧温度对紫外光下增强苯酚光催化降解的 CeO2 基催化剂的影响","authors":"L.A. Ramos-Huerta , Octavio Aguilar-Martínez , Yanet Piña-Pérez , Víctor Santes , Luis Lartundo Rojas , Francisco Tzompantzi , C.E. Santolalla-Vargas","doi":"10.1016/j.mssp.2024.109123","DOIUrl":null,"url":null,"abstract":"<div><div>This research delves into the photocatalytic degradation of phenol using CeO<sub>2</sub> nanoparticles synthesized through solution combustion synthesis (SCS) at varying calcination temperatures (250, 300, 400, 500, and 600 °C). A comprehensive array of characterization techniques was employed, including XRD, FTIR, SEM-EDS, HR-TEM, N<sub>2</sub> physisorption, UV–Vis DRS, Raman spectroscopy, and XPS. Our findings reveal a profound influence of calcination temperatures on the presence and quantity of Ce<sup>3+</sup> and Ce<sup>4+</sup> species, thereby modulating defective sites and surface area, crucial factors impacting performance. CeO<sub>2</sub> synthesized at 400 °C stands out with a notable combination of high defects, extensive surface area, and a photocatalytic efficiency of 62 %. This work enhances our understanding of CeO<sub>2</sub> photocatalysts for environmental applications and emphasizes the superior performance of mild calcination temperatures in ceria materials.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109123"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Effect of calcination temperature on CeO2-based catalysts with enhanced photocatalytic degradation of phenol under UV light\",\"authors\":\"L.A. Ramos-Huerta , Octavio Aguilar-Martínez , Yanet Piña-Pérez , Víctor Santes , Luis Lartundo Rojas , Francisco Tzompantzi , C.E. Santolalla-Vargas\",\"doi\":\"10.1016/j.mssp.2024.109123\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>This research delves into the photocatalytic degradation of phenol using CeO<sub>2</sub> nanoparticles synthesized through solution combustion synthesis (SCS) at varying calcination temperatures (250, 300, 400, 500, and 600 °C). A comprehensive array of characterization techniques was employed, including XRD, FTIR, SEM-EDS, HR-TEM, N<sub>2</sub> physisorption, UV–Vis DRS, Raman spectroscopy, and XPS. Our findings reveal a profound influence of calcination temperatures on the presence and quantity of Ce<sup>3+</sup> and Ce<sup>4+</sup> species, thereby modulating defective sites and surface area, crucial factors impacting performance. CeO<sub>2</sub> synthesized at 400 °C stands out with a notable combination of high defects, extensive surface area, and a photocatalytic efficiency of 62 %. This work enhances our understanding of CeO<sub>2</sub> photocatalysts for environmental applications and emphasizes the superior performance of mild calcination temperatures in ceria materials.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"187 \",\"pages\":\"Article 109123\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124010199\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010199","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Effect of calcination temperature on CeO2-based catalysts with enhanced photocatalytic degradation of phenol under UV light
This research delves into the photocatalytic degradation of phenol using CeO2 nanoparticles synthesized through solution combustion synthesis (SCS) at varying calcination temperatures (250, 300, 400, 500, and 600 °C). A comprehensive array of characterization techniques was employed, including XRD, FTIR, SEM-EDS, HR-TEM, N2 physisorption, UV–Vis DRS, Raman spectroscopy, and XPS. Our findings reveal a profound influence of calcination temperatures on the presence and quantity of Ce3+ and Ce4+ species, thereby modulating defective sites and surface area, crucial factors impacting performance. CeO2 synthesized at 400 °C stands out with a notable combination of high defects, extensive surface area, and a photocatalytic efficiency of 62 %. This work enhances our understanding of CeO2 photocatalysts for environmental applications and emphasizes the superior performance of mild calcination temperatures in ceria materials.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.