Endhah Purwandari , Retno Asih , Sudarsono , Diky Anggoro , Budhi Priyanto , Gerald Ensang Timuda , Malik Anjelh Baqiya , Iman Santoso , Hideki Nakajima , Muhammad Mahyiddin Ramli , Agus Subekti , Darminto
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Raman spectroscopy and electron microscopy confirmed the stacking of 2D layers forming a multilayer graphene structure. The carbon compound prepared <em>AC</em> films deposited onto a quartz glass surface via spray coating. The films have a thickness ranging from 247 to 478 nm. The dielectric constants of the optical parameters reveal resonant exciton features at a photon energy of ∼3.8 eV, whereas the real component exhibits semiconductive properties. The refractive indices of the p-, i-, and n-layers, which have gap energies in decreasing order, demonstrate a decline. The optical conductivity of <em>aC</em> is higher than that of amorphous silicon, specifically 0.54 × 10<sup>3</sup>Ω<sup>−1</sup>cm<sup>−1</sup>, 0.48 × 10<sup>3</sup> Ω<sup>−1</sup>cm<sup>−1</sup>, and 0.53 × 10<sup>3</sup> Ω<sup>−1</sup>cm<sup>−1</sup> for the p-, i-, and n-type films, respectively. 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引用次数: 0
摘要
无定形碳(aC)因其独特的结构、电学和光学特性而极具吸引力,适合各种应用,尤其是在能源转换方面。这项工作全面研究了 aC 材料的合成,包括本征(i 型)和掺杂条件(p 型和 n 型),以提高光伏薄膜的性能。碳材料是从生物质中提取的,采用的是一种简单、环保的技术。获得的碳化合物呈无定形状态,sp2 C=C 成分大量存在。拉曼光谱和电子显微镜证实了二维层的堆叠,形成了多层石墨烯结构。碳化合物制备的交流电薄膜通过喷涂沉积到石英玻璃表面。这些薄膜的厚度在 247 纳米到 478 纳米之间。光学参数的介电常数显示了光子能量为 ∼3.8 eV 时的共振激子特征,而实际分量则表现出半导体特性。间隙能量依次递减的 p 层、i 层和 n 层的折射率呈现下降趋势。aC 的光导率高于非晶硅,p、i 和 n 型薄膜的光导率分别为 0.54 × 103Ω-1cm-1、0.48 × 103 Ω-1cm-1 和 0.53 × 103 Ω-1cm-1。基于这一结果,我们有理由认为,最近开发的这种材料有可能成为一种重要的光电设备。
Semiconducting biomass-based amorphous carbon films and their potential application in photovoltaic devices
Amorphous carbon (aC) is highly appealing because of its unique structure, electrical and optical properties, making it appropriate for various applications, especially in energy conversion. This work presents a comprehensive study on the synthesis of aC materials, including both intrinsic (i-type) and doped conditions (p- and n-type), to enhance the performance of photovoltaic films. Carbon materials are derived from biomass using a straightforward and environmentally conscious technique. The obtained carbon compound demonstrates an amorphous state with a substantial prevalence of the sp2 C=C component. Raman spectroscopy and electron microscopy confirmed the stacking of 2D layers forming a multilayer graphene structure. The carbon compound prepared AC films deposited onto a quartz glass surface via spray coating. The films have a thickness ranging from 247 to 478 nm. The dielectric constants of the optical parameters reveal resonant exciton features at a photon energy of ∼3.8 eV, whereas the real component exhibits semiconductive properties. The refractive indices of the p-, i-, and n-layers, which have gap energies in decreasing order, demonstrate a decline. The optical conductivity of aC is higher than that of amorphous silicon, specifically 0.54 × 103Ω−1cm−1, 0.48 × 103 Ω−1cm−1, and 0.53 × 103 Ω−1cm−1 for the p-, i-, and n-type films, respectively. Based on this outcome, it is reasonable to suggest that the recently developed material is potentially important as a photovoltaic device.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.