Heider A. Abdulhussein , Md Adil Hossain , Asif Hosen , Diana Dahliah , Mohammed S. Abu-Jafar , Amine Harbi , Redi Kristian Pingak , M. Moutaabbid , Istiak Ahmed Ovi , Md Riazul Islam , Md Kaab Bin Hossen
{"title":"全面分析立方 Ca3SbX3(X = Cl、Br)的结构、声子、电子、机械、光学和热物理性质:DFT - GGA 和 mBJ 研究","authors":"Heider A. Abdulhussein , Md Adil Hossain , Asif Hosen , Diana Dahliah , Mohammed S. Abu-Jafar , Amine Harbi , Redi Kristian Pingak , M. Moutaabbid , Istiak Ahmed Ovi , Md Riazul Islam , Md Kaab Bin Hossen","doi":"10.1016/j.mssp.2024.109133","DOIUrl":null,"url":null,"abstract":"<div><div>The current investigation employed first-principles calculation to assess the structural, phonon, mechanical, electronic, optical, thermodynamic, and thermoelectric properties of lead-free cubic Ca<sub>3</sub>SbX<sub>3</sub> (X = Cl, Br). The dynamic stability of both compounds is assessed by analyzing the phonon dispersion spectrum. The distance between atoms is significantly reduced, leading to a large drop in the bond length, cell volume, and lattice constant of Ca<sub>3</sub>SbX<sub>3</sub> (X = Cl, Br) compounds upon applying pressure. Ca<sub>3</sub>SbCl<sub>3</sub> and Ca<sub>3</sub>SbBr<sub>3</sub> compounds have direct bandgaps (Γ-Γ) of 2.57 and 2.27 eV via mBJ functional and 1.82 and 1.34 eV via GGA functional at 0 GPa pressure. Additionally, the bandgaps of Ca<sub>3</sub>SbCl<sub>3</sub> and Ca<sub>3</sub>SbBr<sub>3</sub> decrease to 1.65 eV and 1.45 eV, respectively, when accounting for the quantum effects of spin-orbit coupling (SOC). As the level of pressure rises to 30 GPa, Ca<sub>3</sub>SbCl<sub>3</sub> and Ca<sub>3</sub>SbBr<sub>3</sub> compound's band gaps reduce to 0.89 and 0.65 eV via mBJ functional and 0.27 and 0.12 via GGA functional. Increasing pressure is shown to reduce the effective mass, thereby enhancing the conductivity of both types of charge carriers. The reduced recombination rate signifies both compounds' greater absorption capabilities, making them more suitable for solar absorbers. The analysis of the mechanical properties indicates that as pressure increases, the elastic moduli rise, and the material transitions from being brittle to becoming more ductile. Additionally, both materials show a redshift of absorption and optical conductivity with improved dielectric constants at high pressure owing to the alteration in the bandgap, which is more appropriate for surgical instruments and solar absorbers. Thermodynamic properties show their temperature tolerance and appropriateness for high temperatures. Lastly, their thermoelectric property evaluation indicates high PF and near unity ZT, suggesting their use in thermoelectric devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109133"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A comprehensive analysis of the structural, phonon, electronic, mechanical, optical, and thermophysical properties of cubic Ca3SbX3 (X = Cl, Br): DFT - GGA and mBJ studies\",\"authors\":\"Heider A. Abdulhussein , Md Adil Hossain , Asif Hosen , Diana Dahliah , Mohammed S. Abu-Jafar , Amine Harbi , Redi Kristian Pingak , M. Moutaabbid , Istiak Ahmed Ovi , Md Riazul Islam , Md Kaab Bin Hossen\",\"doi\":\"10.1016/j.mssp.2024.109133\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The current investigation employed first-principles calculation to assess the structural, phonon, mechanical, electronic, optical, thermodynamic, and thermoelectric properties of lead-free cubic Ca<sub>3</sub>SbX<sub>3</sub> (X = Cl, Br). The dynamic stability of both compounds is assessed by analyzing the phonon dispersion spectrum. The distance between atoms is significantly reduced, leading to a large drop in the bond length, cell volume, and lattice constant of Ca<sub>3</sub>SbX<sub>3</sub> (X = Cl, Br) compounds upon applying pressure. Ca<sub>3</sub>SbCl<sub>3</sub> and Ca<sub>3</sub>SbBr<sub>3</sub> compounds have direct bandgaps (Γ-Γ) of 2.57 and 2.27 eV via mBJ functional and 1.82 and 1.34 eV via GGA functional at 0 GPa pressure. Additionally, the bandgaps of Ca<sub>3</sub>SbCl<sub>3</sub> and Ca<sub>3</sub>SbBr<sub>3</sub> decrease to 1.65 eV and 1.45 eV, respectively, when accounting for the quantum effects of spin-orbit coupling (SOC). As the level of pressure rises to 30 GPa, Ca<sub>3</sub>SbCl<sub>3</sub> and Ca<sub>3</sub>SbBr<sub>3</sub> compound's band gaps reduce to 0.89 and 0.65 eV via mBJ functional and 0.27 and 0.12 via GGA functional. Increasing pressure is shown to reduce the effective mass, thereby enhancing the conductivity of both types of charge carriers. The reduced recombination rate signifies both compounds' greater absorption capabilities, making them more suitable for solar absorbers. The analysis of the mechanical properties indicates that as pressure increases, the elastic moduli rise, and the material transitions from being brittle to becoming more ductile. Additionally, both materials show a redshift of absorption and optical conductivity with improved dielectric constants at high pressure owing to the alteration in the bandgap, which is more appropriate for surgical instruments and solar absorbers. Thermodynamic properties show their temperature tolerance and appropriateness for high temperatures. Lastly, their thermoelectric property evaluation indicates high PF and near unity ZT, suggesting their use in thermoelectric devices.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"187 \",\"pages\":\"Article 109133\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-20\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124010291\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124010291","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
A comprehensive analysis of the structural, phonon, electronic, mechanical, optical, and thermophysical properties of cubic Ca3SbX3 (X = Cl, Br): DFT - GGA and mBJ studies
The current investigation employed first-principles calculation to assess the structural, phonon, mechanical, electronic, optical, thermodynamic, and thermoelectric properties of lead-free cubic Ca3SbX3 (X = Cl, Br). The dynamic stability of both compounds is assessed by analyzing the phonon dispersion spectrum. The distance between atoms is significantly reduced, leading to a large drop in the bond length, cell volume, and lattice constant of Ca3SbX3 (X = Cl, Br) compounds upon applying pressure. Ca3SbCl3 and Ca3SbBr3 compounds have direct bandgaps (Γ-Γ) of 2.57 and 2.27 eV via mBJ functional and 1.82 and 1.34 eV via GGA functional at 0 GPa pressure. Additionally, the bandgaps of Ca3SbCl3 and Ca3SbBr3 decrease to 1.65 eV and 1.45 eV, respectively, when accounting for the quantum effects of spin-orbit coupling (SOC). As the level of pressure rises to 30 GPa, Ca3SbCl3 and Ca3SbBr3 compound's band gaps reduce to 0.89 and 0.65 eV via mBJ functional and 0.27 and 0.12 via GGA functional. Increasing pressure is shown to reduce the effective mass, thereby enhancing the conductivity of both types of charge carriers. The reduced recombination rate signifies both compounds' greater absorption capabilities, making them more suitable for solar absorbers. The analysis of the mechanical properties indicates that as pressure increases, the elastic moduli rise, and the material transitions from being brittle to becoming more ductile. Additionally, both materials show a redshift of absorption and optical conductivity with improved dielectric constants at high pressure owing to the alteration in the bandgap, which is more appropriate for surgical instruments and solar absorbers. Thermodynamic properties show their temperature tolerance and appropriateness for high temperatures. Lastly, their thermoelectric property evaluation indicates high PF and near unity ZT, suggesting their use in thermoelectric devices.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.