通过后跳实现超大规模 STT-MRAM 的多级单元

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-11-16 DOI:10.1016/j.sse.2024.109027

M. Bendra , R.L. de Orio , S. Selberherr , W. Goes , V. Sverdlov

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引用次数: 0

摘要

利用具有拉长和复合铁磁自由层的结构，可以开发出尺寸在个位数纳米范围内的先进磁隧道结。利用先进的建模技术，我们研究了超大规模 STT-MRAM 器件中的后跳效应，这种效应被定义为自由层最后部分的意外切换，导致自由层出现不希望的磁化状态。要了解自由层的切换，必须详细研究作用于无复合层两部分的扭矩。缩小 MRAM 元件尺寸以提高存储器密度可能会导致反跳现象。不过，观察到的反跳效应也可用于实现多级单元。为此，我们仔细研究了一个具有多个隧道势垒接口、直径只有几个纳米的器件的开关行为。我们对超尺度 STT-MRAM 器件的研究凸显了显著的后跳效应，利用这种效应可以实现具有四种不同状态的多位单元，从而增强存储和功能。这些见解对于未来微型化自旋电子器件的设计和优化至关重要。

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A multi-level cell for ultra-scaled STT-MRAM realized by back-hopping

The development of advanced magnetic tunnel junctions with a footprint in the single-digit nanometer range can be achieved using structures with an elongated and composite ferromagnetic free layer. Using advanced modeling techniques, we investigated the back-hopping effect in ultra-scaled STT-MRAM devices, defined as the unintended switching of the last part of the free layer, leading to an undesired magnetization state of the free layer. To understand the switching of the free layer, the torque acting on both parts of the composite-free layer must be studied in detail. A reduction in the size of MRAM components to increase the memory density may lead to back-hopping. However, the observed back-hopping effect can also be exploited for the realization of multi-level cells. For this purpose, we have carefully investigated the switching behavior of a device with several tunnel barrier interfaces and a few nanometers in diameter. Our studies on ultra-scaled STT-MRAM devices highlight the significant back-hopping effect which, when harnessed, can enable multi-bit cells with four distinct states, enhancing storage and functionality. These insights are pivotal for the design and optimization of future miniaturized spintronics devices.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.