Influence of crystal orientation and incident plane on n-type 4H-SiC wafer slicing by using picosecond laser

Laser slicing has been considered as the most efficient technique for slicing SiC wafers with the advantages of small kerf width (loss) and crack, low roughness on cleaved surface, high quality and efficiency, etc. Here, laser slicing of n-type 4H-SiC was demonstrated by using a homemade 1064 nm picosecond laser combined with mechanical stretch stripping. The influence of laser processing along [11 $\overline{\text{2}}$ 0] and [1 $\overline{\text{1}}$ 00] crystal orientations on Si-face and C-face of n-type 4H-SiC, specifically on the internal laser ablation lines and cracks, the peeling tensile strength, and the surface roughness of the peeled surfaces was investigated. The semi-insulating 4H-SiC wafer laser slicing was conducted for comparison. Under the same laser conditions, laser slicing of semi-insulating 4H-SiC was easier than that of n-type. The laser modification quality along [1 $\overline{\text{1}}$ 00] orientation was better than that along [11 $\overline{\text{2}}$ 0] orientation for both the semi-insulating and n-type 4H-SiC and the reasons were explained. The results indicated that the optimal laser slicing scheme detailed laser scanning along [1 $\overline{\text{1}}$ 00] orientation and incidence from the C-face. Finally, a 6-inch, 420.36 µm-thick n-type 4H-SiC wafer was successfully sliced.