Low current driven blue-violet light-emitting diodes based on p-GaN/i-Ga2O3/n-Ga2O3:Si structure

This paper reports a low current driven LED with p-GaN/i-Ga₂O₃/n-Ga₂O₃:Si structure prepared by radio frequency (RF) magnetron sputtering, the driving current of the device is only 0.02 mA. Compared with the reported drive current of the LEDs, the reduction is 100 or even 1000 times. Through the study of its electrical properties, it was found that it had excellent rectification characteristics at different ambient temperatures and the turn-on voltage was about 1.8 V. In addition, the leakage current was as low as 4.30 × 10^-8 mA. Through the electroluminescence test, it was found that the device had the function of emitting in the ultraviolet (363 nm) and visible (425 nm) region, which realized the blue-violet luminescence at room temperature. Furthermore, the device had excellent high temperature color stability and ultra-low color temperature of 1924 K. The color coordinate of the device at room temperature was (0.1905,0.0955). A detailed study was conducted on the electroluminescence mechanism of the device through its band structure, and the causes of the luminescence were analyzed through the Gaussian fitting of the EL spectrum.