前开式统一吊舱 (FOUP) 内常规清洗流的三维定量可视化

IF 2.3 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Sung-Gwang Lee;Juhan Bae;Hoomi Choi;Jaein Jeong;Youngjeong Kim;Wontae Hwang
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引用次数: 0

摘要

前端开放式统一吊舱 (FOUP) 是在众多加工设备之间移动时运送多个晶片的载体。它不可避免地暴露在来自设备前端模块(EFEM)的空气湿度中,由于湿气与空气中的分子污染(AMC)发生反应,导致晶圆表面形成有害的残留颗粒。这会导致严重的缺陷,因此需要了解 EFEM 和 FOUP 内部复杂的流动结构。在此,我们采用磁共振测速仪(MRV)来定性和定量测量传统的加载端口吹扫(LPP)保护晶片时的三维流动。前端 LPP 在 FOUP 和 EFEM 之间形成一道屏障,阻止 EFEM 流动进入 FOUP。此外,在 FOUP 的后部,来自后部和前部 LPP 的气流会发生碰撞,然后从晶片之间流向 FOUP 入口,从而保护晶片。利用计算流体动力学(CFD)模拟,对来自不同清洗口的各种流速组合进行了模拟,最终得出了最佳流动条件。这些研究结果表明,独立控制流速是保护晶片免受缺陷影响的一种实用方法。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Quantitative 3-D Flow Visualization of Conventional Purge Flow Within a Front Opening Unified Pod (FOUP)
The front opening unified pod (FOUP) is a carrier that transports multiple wafers as it moves between numerous processing facilities. It is inevitably exposed to air humidity coming from the equipment front end module (EFEM), which leads to the formation of harmful residual particles on the wafer surfaces due to the reaction of moisture with airborne molecular contamination (AMC). This can cause serious defects, and thus there is a need to understand the complex flow structure inside the EFEM and FOUP. Magnetic resonance velocimetry (MRV) is hereby employed to qualitatively and quantitatively measure the 3D flow when conventional load port purge (LPP) is utilized to protect the wafers. The front LPP forms a barrier between the FOUP and EFEM, blocking the EFEM flow from entering the FOUP. Additionally, at the rear of the FOUP, flow from the rear and front LPP collide and then travels between the wafers toward the FOUP entrance, thereby protecting the wafers. Using computational fluid dynamic (CFD) simulations, various combinations of flow rates from different purge ports were simulated, leading to an optimal flow condition. These findings suggest that independent control of the flow rates can be a practical way to protect the wafers from defects.
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来源期刊
IEEE Transactions on Semiconductor Manufacturing
IEEE Transactions on Semiconductor Manufacturing 工程技术-工程:电子与电气
CiteScore
5.20
自引率
11.10%
发文量
101
审稿时长
3.3 months
期刊介绍: The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.
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