{"title":"利用声共振雾化技术在硅晶片上喷涂光阻","authors":"Jingjun Li;Xiukun Wang;Yadong Sun;Lei Zhang","doi":"10.1109/TSM.2024.3471738","DOIUrl":null,"url":null,"abstract":"Aiming at the poor film evenness in conventional ultrasonic spraying coating methods, an acoustic resonance atomization (ARA) is proposed for spray coating on silicon wafers using an in-house experimental prototype. By modulating the acoustic pressure distribution in the optimized acoustic chamber, the ARA can achieve atomized photoresist droplets with \n<inline-formula> <tex-math>$\\sim 8.5~\\mu $ </tex-math></inline-formula>\nm in median diameter and concentrated droplet concentration. For mesoscale photoresist droplets, the uniform film of AZ P4620 photoresist is coated on silicon wafers by exploring and optimizing the substrate temperatures and spray velocity. The mechanism of uniform film formation by mesoscale photoresist droplets is explored. Smaller droplets can effectively fill the micro-gaps within the photoresist film layer, forming a dense and uniform film. The experimental results demonstrate that the employed coating process can obtain a controllable photoresist film thickness and evenness index of less than 5% with a high-quality film layer, which provides an alternative technological solution for the spray coating.","PeriodicalId":451,"journal":{"name":"IEEE Transactions on Semiconductor Manufacturing","volume":"37 4","pages":"576-582"},"PeriodicalIF":2.3000,"publicationDate":"2024-10-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Photoresist Spray Coating on Silicon Wafers With Acoustic Resonance Atomization\",\"authors\":\"Jingjun Li;Xiukun Wang;Yadong Sun;Lei Zhang\",\"doi\":\"10.1109/TSM.2024.3471738\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Aiming at the poor film evenness in conventional ultrasonic spraying coating methods, an acoustic resonance atomization (ARA) is proposed for spray coating on silicon wafers using an in-house experimental prototype. By modulating the acoustic pressure distribution in the optimized acoustic chamber, the ARA can achieve atomized photoresist droplets with \\n<inline-formula> <tex-math>$\\\\sim 8.5~\\\\mu $ </tex-math></inline-formula>\\nm in median diameter and concentrated droplet concentration. For mesoscale photoresist droplets, the uniform film of AZ P4620 photoresist is coated on silicon wafers by exploring and optimizing the substrate temperatures and spray velocity. The mechanism of uniform film formation by mesoscale photoresist droplets is explored. Smaller droplets can effectively fill the micro-gaps within the photoresist film layer, forming a dense and uniform film. The experimental results demonstrate that the employed coating process can obtain a controllable photoresist film thickness and evenness index of less than 5% with a high-quality film layer, which provides an alternative technological solution for the spray coating.\",\"PeriodicalId\":451,\"journal\":{\"name\":\"IEEE Transactions on Semiconductor Manufacturing\",\"volume\":\"37 4\",\"pages\":\"576-582\"},\"PeriodicalIF\":2.3000,\"publicationDate\":\"2024-10-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Semiconductor Manufacturing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10701043/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Semiconductor Manufacturing","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10701043/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0
摘要
针对传统超声波喷涂方法涂膜均匀性差的问题,我们提出了一种声共振雾化技术(ARA),并利用内部实验原型在硅片上进行了喷涂。通过调节优化声学室中的声压分布,ARA 可以实现中值直径为 8.5~\mu $ m 的雾化光刻胶液滴,并且液滴浓度集中。对于中尺度光刻胶液滴,通过探索和优化基底温度和喷雾速度,在硅片上涂覆了均匀的 AZ P4620 光刻胶膜。探索了中尺度光刻胶液滴均匀成膜的机理。较小的液滴能有效填充光刻胶膜层内的微间隙,形成致密均匀的薄膜。实验结果表明,所采用的喷涂工艺可获得可控的光刻胶膜厚,均匀度指数小于 5%,膜层质量高,为喷涂工艺提供了另一种技术解决方案。
Photoresist Spray Coating on Silicon Wafers With Acoustic Resonance Atomization
Aiming at the poor film evenness in conventional ultrasonic spraying coating methods, an acoustic resonance atomization (ARA) is proposed for spray coating on silicon wafers using an in-house experimental prototype. By modulating the acoustic pressure distribution in the optimized acoustic chamber, the ARA can achieve atomized photoresist droplets with
$\sim 8.5~\mu $
m in median diameter and concentrated droplet concentration. For mesoscale photoresist droplets, the uniform film of AZ P4620 photoresist is coated on silicon wafers by exploring and optimizing the substrate temperatures and spray velocity. The mechanism of uniform film formation by mesoscale photoresist droplets is explored. Smaller droplets can effectively fill the micro-gaps within the photoresist film layer, forming a dense and uniform film. The experimental results demonstrate that the employed coating process can obtain a controllable photoresist film thickness and evenness index of less than 5% with a high-quality film layer, which provides an alternative technological solution for the spray coating.
期刊介绍:
The IEEE Transactions on Semiconductor Manufacturing addresses the challenging problems of manufacturing complex microelectronic components, especially very large scale integrated circuits (VLSI). Manufacturing these products requires precision micropatterning, precise control of materials properties, ultraclean work environments, and complex interactions of chemical, physical, electrical and mechanical processes.