用于减少锂离子电池枝晶的高性能柔性生物聚合物基氧化 Ce 复合电解质

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-17 DOI:10.1016/j.mssp.2024.109101

M. Leo Edward , M. Roselin Ranjitha , G. Thennarasu , E. Ranjith Kumar , A.F. Abd El-Rehim , V. Jaisankar

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引用次数: 0

摘要

我们提出了一种新型固态复合聚合物电解质 (CPE)，其中包括 Li7La2.5Ce0.5Zr2O12 (Ce-LLZO)、壳聚糖 (CS) /琼脂糖 (AA) 聚合物、聚乙二醇 (PEG) 增塑剂和 LiClO4 盐。在 25 °C 时，由 15 wt% Ce-LLZO、60 wt% CS-AA、15 wt% PEG 和 10 wt% LiClO4 组成的 CPE3 配方显示出卓越的锂（Li）离子电导率（5.18 × 10-3 S cm-1）和最佳转移数（TLi+）（0.937）。我们使用线性扫描伏安法评估了 CPE3 的电化学稳定性，结果显示其最大稳定性极限为 4.1 V（相对于 Li/Li+）。此外，采用锂||CPE3||NMC 配置制造的纽扣电池的放电容量达到了惊人的 163 mAhg-1，并且在室温 0.1 °C 下可稳定循环 100 次。相反，当进行锂离子电镀/剥离循环时，对称锂||CPE3||锂电池表现出 550 h 的稳定性，并保持 2.0 mA cm-2 的电流密度。与锂金属相比，所提出的材料降低了过电位，同时提高了电化学稳定性。

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A high-performance flexible biopolymer-based Ce oxide composite electrolyte for lithium-ion battery dendrite reduction

We propose a novel solid-state composite polymer electrolyte (CPE) that includes Li₇La_2.5Ce_0.5Zr₂O₁₂ (Ce-LLZO), chitosan (CS)/agar-agar (AA) polymer, polyethylene glycol (PEG) plasticizer, and LiClO₄ salt. At 25 °C, the CPE₃ formulation, consisting of 15 wt% Ce-LLZO, 60 wt% CS-AA, 15 wt% PEG, and 10 wt% LiClO₄, demonstrated exceptional lithium (Li)-ion conductivity of 5.18 × 10^-3 S cm⁻¹ and an optimal transference number (TLi⁺) of 0.937. We assessed the electrochemical stability of CPE₃ using linear sweep voltammetry, which revealed a maximum stability limit of 4.1 V (versus Li/Li+). In addition, the coin cell made with the Li||CPE₃||NMC configuration had an amazing discharge capacity of 163 mAhg-1 and stayed stable for up to 100 cycles at 0.1 °C in room temperature. Conversely, when subjected to Li-plating/stripping cycles, the symmetric Li||CPE₃||Li cell exhibited stability for 550 h and maintained a current density of 2.0 mA cm⁻². Compared to Li-metal, the proposed material exhibited reduced overpotential while simultaneously enhancing electrochemical stability.

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

期刊介绍： Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.