{"title":"与原子位置相关的 ZnSbF3 氟共晶的结构、电子、机械和光学特性","authors":"Tanmoy Kumar Ghosh , M.N.H. Liton , Arpon Chakraborty , M.K.R. Khan , M.S.I. Sarker","doi":"10.1016/j.mssp.2024.109065","DOIUrl":null,"url":null,"abstract":"<div><div>In this study, we have investigated the structural, electronic, mechanical, and optical properties of ZnSbF<sub>3</sub>-I and ZnSbF<sub>3</sub>-II by altering the position of Zn and Sb through density functional theory (DFT) for the first time. The structural stability of both structures was confirmed by calculating formation enthalpy. A remarkable phenomenon has been observed from the electronic band structures analysis, whenever altering the atomic of Zn and Sb, which leads to a transition from semiconducting, ZnSbF<sub>3</sub>-I to metallic, ZnSbF<sub>3</sub>-II conductivity. The obtained bandgap value of ZnSbF<sub>3</sub>-I is of the order of 0.97 eV with indirect transition and the spin-orbit coupling (SOC) effect reduced the band gap energy to 0.49 eV. Density of states (DOS) curves revealed that the Sb-<em>5p</em> state is mainly responsible for this phase transition. The estimated elastic constants suggested that both phases are mechanically stable. By assessing the different elastic parameters, it can be concluded that both phases are mechanically ductile, machinable, isotropic, and soft in nature. A large value of bulk modulus for ZnSbF<sub>3</sub>-II indicates that it is harder and cannot be compressed as easily as ZnSbF<sub>3</sub>-I. The structures exhibit high efficiency in absorbing UV light. ZnSbF<sub>3</sub>-II's strong reflectivity in the infrared spectrum makes it an option to use for IR shielding. This study will guide further theoretical and experimental investigation.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"187 ","pages":"Article 109065"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Atomic position dependent structural, electronic, mechanical and optical properties of ZnSbF3 fluoroperovskites\",\"authors\":\"Tanmoy Kumar Ghosh , M.N.H. Liton , Arpon Chakraborty , M.K.R. Khan , M.S.I. Sarker\",\"doi\":\"10.1016/j.mssp.2024.109065\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this study, we have investigated the structural, electronic, mechanical, and optical properties of ZnSbF<sub>3</sub>-I and ZnSbF<sub>3</sub>-II by altering the position of Zn and Sb through density functional theory (DFT) for the first time. The structural stability of both structures was confirmed by calculating formation enthalpy. A remarkable phenomenon has been observed from the electronic band structures analysis, whenever altering the atomic of Zn and Sb, which leads to a transition from semiconducting, ZnSbF<sub>3</sub>-I to metallic, ZnSbF<sub>3</sub>-II conductivity. The obtained bandgap value of ZnSbF<sub>3</sub>-I is of the order of 0.97 eV with indirect transition and the spin-orbit coupling (SOC) effect reduced the band gap energy to 0.49 eV. Density of states (DOS) curves revealed that the Sb-<em>5p</em> state is mainly responsible for this phase transition. The estimated elastic constants suggested that both phases are mechanically stable. By assessing the different elastic parameters, it can be concluded that both phases are mechanically ductile, machinable, isotropic, and soft in nature. A large value of bulk modulus for ZnSbF<sub>3</sub>-II indicates that it is harder and cannot be compressed as easily as ZnSbF<sub>3</sub>-I. The structures exhibit high efficiency in absorbing UV light. ZnSbF<sub>3</sub>-II's strong reflectivity in the infrared spectrum makes it an option to use for IR shielding. This study will guide further theoretical and experimental investigation.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"187 \",\"pages\":\"Article 109065\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124009612\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009612","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Atomic position dependent structural, electronic, mechanical and optical properties of ZnSbF3 fluoroperovskites
In this study, we have investigated the structural, electronic, mechanical, and optical properties of ZnSbF3-I and ZnSbF3-II by altering the position of Zn and Sb through density functional theory (DFT) for the first time. The structural stability of both structures was confirmed by calculating formation enthalpy. A remarkable phenomenon has been observed from the electronic band structures analysis, whenever altering the atomic of Zn and Sb, which leads to a transition from semiconducting, ZnSbF3-I to metallic, ZnSbF3-II conductivity. The obtained bandgap value of ZnSbF3-I is of the order of 0.97 eV with indirect transition and the spin-orbit coupling (SOC) effect reduced the band gap energy to 0.49 eV. Density of states (DOS) curves revealed that the Sb-5p state is mainly responsible for this phase transition. The estimated elastic constants suggested that both phases are mechanically stable. By assessing the different elastic parameters, it can be concluded that both phases are mechanically ductile, machinable, isotropic, and soft in nature. A large value of bulk modulus for ZnSbF3-II indicates that it is harder and cannot be compressed as easily as ZnSbF3-I. The structures exhibit high efficiency in absorbing UV light. ZnSbF3-II's strong reflectivity in the infrared spectrum makes it an option to use for IR shielding. This study will guide further theoretical and experimental investigation.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.