与原子位置相关的 ZnSbF3 氟共晶的结构、电子、机械和光学特性

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Tanmoy Kumar Ghosh , M.N.H. Liton , Arpon Chakraborty , M.K.R. Khan , M.S.I. Sarker
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引用次数: 0

摘要

在这项研究中,我们首次通过密度泛函理论(DFT)改变了 Zn 和 Sb 的位置,研究了 ZnSbF3-I 和 ZnSbF3-II 的结构、电子、机械和光学特性。通过计算形成焓,证实了这两种结构的稳定性。从电子能带结构分析中观察到一个显著的现象,只要改变 Zn 和 Sb 的原子位置,就会导致导电性从半导体 ZnSbF3-I 过渡到金属 ZnSbF3-II。通过间接转变获得的 ZnSbF3-I 带隙值为 0.97 eV,而自旋轨道耦合(SOC)效应将带隙能降低到 0.49 eV。状态密度(DOS)曲线显示,Sb-5p 状态是这一相变的主要原因。估算的弹性常数表明,这两种相态都具有机械稳定性。通过评估不同的弹性参数,可以得出结论:这两种相都具有机械延展性、可加工性、各向同性和柔软性。ZnSbF3-II 的体积模量值较大,表明其硬度较高,不能像 ZnSbF3-I 那样容易压缩。这些结构在吸收紫外线方面表现出很高的效率。ZnSbF3-II 在红外光谱中具有很强的反射性,因此可用于红外屏蔽。这项研究将为进一步的理论和实验研究提供指导。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Atomic position dependent structural, electronic, mechanical and optical properties of ZnSbF3 fluoroperovskites
In this study, we have investigated the structural, electronic, mechanical, and optical properties of ZnSbF3-I and ZnSbF3-II by altering the position of Zn and Sb through density functional theory (DFT) for the first time. The structural stability of both structures was confirmed by calculating formation enthalpy. A remarkable phenomenon has been observed from the electronic band structures analysis, whenever altering the atomic of Zn and Sb, which leads to a transition from semiconducting, ZnSbF3-I to metallic, ZnSbF3-II conductivity. The obtained bandgap value of ZnSbF3-I is of the order of 0.97 eV with indirect transition and the spin-orbit coupling (SOC) effect reduced the band gap energy to 0.49 eV. Density of states (DOS) curves revealed that the Sb-5p state is mainly responsible for this phase transition. The estimated elastic constants suggested that both phases are mechanically stable. By assessing the different elastic parameters, it can be concluded that both phases are mechanically ductile, machinable, isotropic, and soft in nature. A large value of bulk modulus for ZnSbF3-II indicates that it is harder and cannot be compressed as easily as ZnSbF3-I. The structures exhibit high efficiency in absorbing UV light. ZnSbF3-II's strong reflectivity in the infrared spectrum makes it an option to use for IR shielding. This study will guide further theoretical and experimental investigation.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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