考虑阈值电压漂移补偿的 SiC MOSFET 在线结温检测电路

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-11-17 DOI:10.1016/j.microrel.2024.115548

Ruoyin Wang , Xiaoyong Zhu

{"title":"考虑阈值电压漂移补偿的 SiC MOSFET 在线结温检测电路","authors":"Ruoyin Wang , Xiaoyong Zhu","doi":"10.1016/j.microrel.2024.115548","DOIUrl":null,"url":null,"abstract":"<div><div>Temperature is the main factor affecting the reliability of SiC MOSFETs. Therefore, real-time monitoring technology for junction temperature has become a prerequisite for implementing thermal management strategies. Based on the temperature sensitive electrical parameter method, this paper first determines the temperature dependence of the threshold voltage Vth. Secondly, a SiC MOSFETs junction temperature detection circuit based on threshold voltage is constructed using a T flip-flop. Furthermore, based on this circuit, the junction temperature detection of SiC MOSFETs is achieved. This method has a simple circuit structure, does not require intrusion into the device interior, and can be measured online. Then, an inverter experimental platform is built, and the junction temperature detection performance of the proposed method is tested both offline and online. The experimental results showed that the proposed method has good sensitivity and linearity(-5 mV/°C), and the error is less than 3 °C. Finally, this paper further proposes a threshold voltage drift compensation strategy flow for the junction temperature model to correct the detection error caused by aging.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"163 ","pages":"Article 115548"},"PeriodicalIF":1.6000,"publicationDate":"2024-11-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"An online junction temperature detection circuit for SiC MOSFETs considering threshold voltage drift compensation\",\"authors\":\"Ruoyin Wang , Xiaoyong Zhu\",\"doi\":\"10.1016/j.microrel.2024.115548\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Temperature is the main factor affecting the reliability of SiC MOSFETs. Therefore, real-time monitoring technology for junction temperature has become a prerequisite for implementing thermal management strategies. Based on the temperature sensitive electrical parameter method, this paper first determines the temperature dependence of the threshold voltage Vth. Secondly, a SiC MOSFETs junction temperature detection circuit based on threshold voltage is constructed using a T flip-flop. Furthermore, based on this circuit, the junction temperature detection of SiC MOSFETs is achieved. This method has a simple circuit structure, does not require intrusion into the device interior, and can be measured online. Then, an inverter experimental platform is built, and the junction temperature detection performance of the proposed method is tested both offline and online. The experimental results showed that the proposed method has good sensitivity and linearity(-5 mV/°C), and the error is less than 3 °C. Finally, this paper further proposes a threshold voltage drift compensation strategy flow for the junction temperature model to correct the detection error caused by aging.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"163 \",\"pages\":\"Article 115548\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424002282\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002282","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

温度是影响 SiC MOSFET 可靠性的主要因素。因此，结温实时监控技术已成为实施热管理策略的先决条件。本文基于温度敏感电参数方法，首先确定了阈值电压 Vth 的温度依赖性。其次，利用 T 触发器构建了基于阈值电压的 SiC MOSFET 结温检测电路。此外，基于该电路，还实现了 SiC MOSFET 的结温检测。该方法电路结构简单，无需侵入器件内部，可在线测量。然后，建立了一个逆变器实验平台，并对所提方法的结温检测性能进行了离线和在线测试。实验结果表明，所提出的方法具有良好的灵敏度和线性度（-5 mV/°C），误差小于 3 °C。最后，本文进一步提出了结温模型的阈值电压漂移补偿策略流程，以纠正老化引起的检测误差。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

An online junction temperature detection circuit for SiC MOSFETs considering threshold voltage drift compensation

Temperature is the main factor affecting the reliability of SiC MOSFETs. Therefore, real-time monitoring technology for junction temperature has become a prerequisite for implementing thermal management strategies. Based on the temperature sensitive electrical parameter method, this paper first determines the temperature dependence of the threshold voltage Vth. Secondly, a SiC MOSFETs junction temperature detection circuit based on threshold voltage is constructed using a T flip-flop. Furthermore, based on this circuit, the junction temperature detection of SiC MOSFETs is achieved. This method has a simple circuit structure, does not require intrusion into the device interior, and can be measured online. Then, an inverter experimental platform is built, and the junction temperature detection performance of the proposed method is tested both offline and online. The experimental results showed that the proposed method has good sensitivity and linearity(-5 mV/°C), and the error is less than 3 °C. Finally, this paper further proposes a threshold voltage drift compensation strategy flow for the junction temperature model to correct the detection error caused by aging.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.