Tingwei Gu, Ning Liu, Zhengsen Feng, Xiaodong Sun, Xiangdong Meng
{"title":"TXV 结构材料力学参数的等效建模和模型试验验证方法研究","authors":"Tingwei Gu, Ning Liu, Zhengsen Feng, Xiaodong Sun, Xiangdong Meng","doi":"10.1016/j.microrel.2024.115545","DOIUrl":null,"url":null,"abstract":"<div><div>Aiming at the problems of multi-scale mesh division and low computational efficiency encountered during TXV (through X via) structural simulation, an equivalent modeling method for material mechanics parameters of TXV structure is proposed. By conducting mechanics simulations on the minimum elements of three TXV structures, namely through silicon via (TSV), through mold via (TMV) and through glass via (TGV), the anisotropic material mechanics parameters of TXV structures corresponding to different substrate materials, via diameters, via depths and via pitches are obtained. Based on simulation data and BP (back propagation) neural network algorithm, the material mechanics parameter equivalence models of TXV structures are established. Based on the four-point bending method, the theoretical calculation and simulation analysis of the actual TSV structure are carried out, and the accuracy of the equivalent model is tested and verified by the force and strain measurement systems. The simulation and test results show that the prediction accuracy of equivalent models based on BP algorithm is high, and the prediction errors for training samples of TSV, TMV and TGV structures are less than 0.467 %, 3.571 % and 1.303 %, respectively, and the prediction errors for testing samples are less than 0.424 %, 3.130 % and 1.444 %, respectively. After equivalence and simplification, the mesh division and computational efficiency of the simulation model are improved significantly, the number of mesh elements is reduced by 95.79 %, and the calculation time is shortened by 94.17 %. The simulation accuracy based on the equivalent model is high, the strain simulation error between the simplified model and the complete model is 0.24 %, and the error between the strain simulation result of the simplified model and the actual measurement result is 2.81 %.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":"163 ","pages":"Article 115545"},"PeriodicalIF":1.6000,"publicationDate":"2024-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on equivalent modeling and model testing verification methods for material mechanics parameters of TXV structure\",\"authors\":\"Tingwei Gu, Ning Liu, Zhengsen Feng, Xiaodong Sun, Xiangdong Meng\",\"doi\":\"10.1016/j.microrel.2024.115545\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Aiming at the problems of multi-scale mesh division and low computational efficiency encountered during TXV (through X via) structural simulation, an equivalent modeling method for material mechanics parameters of TXV structure is proposed. By conducting mechanics simulations on the minimum elements of three TXV structures, namely through silicon via (TSV), through mold via (TMV) and through glass via (TGV), the anisotropic material mechanics parameters of TXV structures corresponding to different substrate materials, via diameters, via depths and via pitches are obtained. Based on simulation data and BP (back propagation) neural network algorithm, the material mechanics parameter equivalence models of TXV structures are established. Based on the four-point bending method, the theoretical calculation and simulation analysis of the actual TSV structure are carried out, and the accuracy of the equivalent model is tested and verified by the force and strain measurement systems. The simulation and test results show that the prediction accuracy of equivalent models based on BP algorithm is high, and the prediction errors for training samples of TSV, TMV and TGV structures are less than 0.467 %, 3.571 % and 1.303 %, respectively, and the prediction errors for testing samples are less than 0.424 %, 3.130 % and 1.444 %, respectively. After equivalence and simplification, the mesh division and computational efficiency of the simulation model are improved significantly, the number of mesh elements is reduced by 95.79 %, and the calculation time is shortened by 94.17 %. The simulation accuracy based on the equivalent model is high, the strain simulation error between the simplified model and the complete model is 0.24 %, and the error between the strain simulation result of the simplified model and the actual measurement result is 2.81 %.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":\"163 \",\"pages\":\"Article 115545\"},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-11-14\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424002257\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002257","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Research on equivalent modeling and model testing verification methods for material mechanics parameters of TXV structure
Aiming at the problems of multi-scale mesh division and low computational efficiency encountered during TXV (through X via) structural simulation, an equivalent modeling method for material mechanics parameters of TXV structure is proposed. By conducting mechanics simulations on the minimum elements of three TXV structures, namely through silicon via (TSV), through mold via (TMV) and through glass via (TGV), the anisotropic material mechanics parameters of TXV structures corresponding to different substrate materials, via diameters, via depths and via pitches are obtained. Based on simulation data and BP (back propagation) neural network algorithm, the material mechanics parameter equivalence models of TXV structures are established. Based on the four-point bending method, the theoretical calculation and simulation analysis of the actual TSV structure are carried out, and the accuracy of the equivalent model is tested and verified by the force and strain measurement systems. The simulation and test results show that the prediction accuracy of equivalent models based on BP algorithm is high, and the prediction errors for training samples of TSV, TMV and TGV structures are less than 0.467 %, 3.571 % and 1.303 %, respectively, and the prediction errors for testing samples are less than 0.424 %, 3.130 % and 1.444 %, respectively. After equivalence and simplification, the mesh division and computational efficiency of the simulation model are improved significantly, the number of mesh elements is reduced by 95.79 %, and the calculation time is shortened by 94.17 %. The simulation accuracy based on the equivalent model is high, the strain simulation error between the simplified model and the complete model is 0.24 %, and the error between the strain simulation result of the simplified model and the actual measurement result is 2.81 %.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.