Synthesis and characterization of InGaZnO nanocomposites: An insight of optical, dielectric, and magnetic properties

In this study, pure Indium oxide (In₂O₃ 100 %) and its composite films Indium gallium oxide (IGO 50 %:50 %), and Indium gallium zinc oxide (IGZO 33 %:33 %:34 %) are deposited on glass substrate by Sol-gel dip coating method. Indium oxide and its composites have a high degree of crystallization, as evident by the strong diffraction peaks. The SEM images depict distinctly diverse morphologies of nanostructures varied in size from 22.2 nm to 138 nm. The wider band gap (Eg) engineering (reported (Eg≈ 3.62 eV)–In₂O₃, (Eg ≈ 3.83 eV)–IGO, (Eg≈3.74 eV) –IGZO) and heterostructure formation is also advantageous for novel In₂O₃ applications in advanced (transparent) devices and sensors. Complex impedance analysis provides insights into the grains and grain boundaries of In₂O₃ and its composite films (IGO, IGZO). The VSM measurements confirms that IGZO has a higher saturation magnetization value of 13.33 emu/cm³ and a lower coercivity value of 429.54 Oe as compared to In₂O₃ and IGO highlighting their magnetic properties suitable for spintronic and high-frequency device applications.