{"title":"Ag-Bi2S3 纳米复合材料对高灵敏度和选择性 Cl2 气体传感器的影响:合成、表征和气体传感性能","authors":"Gangadhar Bandewad , Chetan Kamble , Sunil Pawar","doi":"10.1016/j.sse.2024.109024","DOIUrl":null,"url":null,"abstract":"<div><div>The gas sensing capabilities of Bi<sub>2</sub>S<sub>3</sub> chalcogenide have been actively enhanced and explored revealing its potential for high-performance Cl<sub>2</sub> gas detection under different environmental conditions and sensing configurations. This work successfully synthesized Bi<sub>2</sub>S<sub>3</sub> material via the SILAR method and further enhanced its sensing capabilities by fabricating Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite. Both pristine Bi<sub>2</sub>S<sub>3</sub> and Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite films underwent comprehensive characterization utilizing techniques such as FESEM, EDX, XRD, XPS, and RAMAN to analyze their morphological, structural, and chemical properties. Gas sensing capabilities were evaluated across a temperature range of 26–350 °C and varying Cl<sub>2</sub> gas concentrations (0.1–50 ppm). The findings reveal that the Ag-Bi<sub>2</sub>S<sub>3</sub> sensor demonstrates notably superior Cl<sub>2</sub> sensing response, particularly at an operational temperature of 150 °C, suggesting its promising potential for Cl<sub>2</sub> detection. The LOD has been calculated for Ag-Bi<sub>2</sub>S<sub>3</sub> sensor showing results of 0.150 better than pristine Bi<sub>2</sub>S<sub>3.</sub> HOMO-LUMO and PCA analysis for sensors has been studied to understand their capabilities with different gas sensing.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":"223 ","pages":"Article 109024"},"PeriodicalIF":1.4000,"publicationDate":"2024-11-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Influence of Ag-Bi2S3 nanocomposites for highly sensitive and selective Cl2 gas sensors: Synthesis, characterization, and gas sensing performance\",\"authors\":\"Gangadhar Bandewad , Chetan Kamble , Sunil Pawar\",\"doi\":\"10.1016/j.sse.2024.109024\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>The gas sensing capabilities of Bi<sub>2</sub>S<sub>3</sub> chalcogenide have been actively enhanced and explored revealing its potential for high-performance Cl<sub>2</sub> gas detection under different environmental conditions and sensing configurations. This work successfully synthesized Bi<sub>2</sub>S<sub>3</sub> material via the SILAR method and further enhanced its sensing capabilities by fabricating Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite. Both pristine Bi<sub>2</sub>S<sub>3</sub> and Ag-Bi<sub>2</sub>S<sub>3</sub> nanocomposite films underwent comprehensive characterization utilizing techniques such as FESEM, EDX, XRD, XPS, and RAMAN to analyze their morphological, structural, and chemical properties. Gas sensing capabilities were evaluated across a temperature range of 26–350 °C and varying Cl<sub>2</sub> gas concentrations (0.1–50 ppm). The findings reveal that the Ag-Bi<sub>2</sub>S<sub>3</sub> sensor demonstrates notably superior Cl<sub>2</sub> sensing response, particularly at an operational temperature of 150 °C, suggesting its promising potential for Cl<sub>2</sub> detection. The LOD has been calculated for Ag-Bi<sub>2</sub>S<sub>3</sub> sensor showing results of 0.150 better than pristine Bi<sub>2</sub>S<sub>3.</sub> HOMO-LUMO and PCA analysis for sensors has been studied to understand their capabilities with different gas sensing.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":\"223 \",\"pages\":\"Article 109024\"},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-11-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001734\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001734","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Influence of Ag-Bi2S3 nanocomposites for highly sensitive and selective Cl2 gas sensors: Synthesis, characterization, and gas sensing performance
The gas sensing capabilities of Bi2S3 chalcogenide have been actively enhanced and explored revealing its potential for high-performance Cl2 gas detection under different environmental conditions and sensing configurations. This work successfully synthesized Bi2S3 material via the SILAR method and further enhanced its sensing capabilities by fabricating Ag-Bi2S3 nanocomposite. Both pristine Bi2S3 and Ag-Bi2S3 nanocomposite films underwent comprehensive characterization utilizing techniques such as FESEM, EDX, XRD, XPS, and RAMAN to analyze their morphological, structural, and chemical properties. Gas sensing capabilities were evaluated across a temperature range of 26–350 °C and varying Cl2 gas concentrations (0.1–50 ppm). The findings reveal that the Ag-Bi2S3 sensor demonstrates notably superior Cl2 sensing response, particularly at an operational temperature of 150 °C, suggesting its promising potential for Cl2 detection. The LOD has been calculated for Ag-Bi2S3 sensor showing results of 0.150 better than pristine Bi2S3. HOMO-LUMO and PCA analysis for sensors has been studied to understand their capabilities with different gas sensing.
期刊介绍:
It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.