Hira Naz , Muhammad Adnan , Zobia Irshad , Riaz Hussain , Hany W. Darwish , Junaid Yaqoob
{"title":"为有机和过氧化物太阳能电池开发具有成本效益的二苯胺取代型空穴传输材料","authors":"Hira Naz , Muhammad Adnan , Zobia Irshad , Riaz Hussain , Hany W. Darwish , Junaid Yaqoob","doi":"10.1016/j.mssp.2024.109089","DOIUrl":null,"url":null,"abstract":"<div><div>In recent years, material developments have continued to increase the performances of organic and perovskite solar cells (PSCs). Therefore, herein, we designed (HRN1-HRN11) and characterized eleven new hole transport materials (HTM) for PSCs. A systematic investigation has been conducted to investigate the optoelectrical characteristics of these HTMs. The optical characteristics and structure of these modeled HTMs have been analyzed using density functional theory (DFT) and time-dependent (TD-DFT). Ionization potential, electron density difference (EDD), electron and hole reorganizational energies, charge transfer analysis, transition density matrix, and molecular electrostatic potential analysis were performed to investigate the potential of these designed series (HRN1-HRN11) for PSCs. In comparison to the synthetic reference molecule (HRN), which has a band gap of 3.64 eV and a wavelength of 388.69 nm, the newly developed compounds (HRN1-HRN11) show promising optoelectronic qualities with much lower energy gaps (up to 2.01 eV) and absorbed maximum absorption wavelength (940.99 nm). Together with their excellent hole and electron transport capabilities, improved open-circuit voltage values of 1.06–1.34 eV are calculated. The acceptor and donor regions of HRN2, HRN7, and HRN1 exhibit great charge mobility and have the lowest electron reorganization energy. HRN9 has the greatest reorganization energy of hole (<em>λ</em><sub>h</sub>) value among all designed molecules. The work emphasizes designing suitable photovoltaic materials to produce highly efficient solar cell devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109089"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of cost-effective diphenylamine substituted hole transporting materials for organic and perovskite solar cells\",\"authors\":\"Hira Naz , Muhammad Adnan , Zobia Irshad , Riaz Hussain , Hany W. Darwish , Junaid Yaqoob\",\"doi\":\"10.1016/j.mssp.2024.109089\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In recent years, material developments have continued to increase the performances of organic and perovskite solar cells (PSCs). Therefore, herein, we designed (HRN1-HRN11) and characterized eleven new hole transport materials (HTM) for PSCs. A systematic investigation has been conducted to investigate the optoelectrical characteristics of these HTMs. The optical characteristics and structure of these modeled HTMs have been analyzed using density functional theory (DFT) and time-dependent (TD-DFT). Ionization potential, electron density difference (EDD), electron and hole reorganizational energies, charge transfer analysis, transition density matrix, and molecular electrostatic potential analysis were performed to investigate the potential of these designed series (HRN1-HRN11) for PSCs. In comparison to the synthetic reference molecule (HRN), which has a band gap of 3.64 eV and a wavelength of 388.69 nm, the newly developed compounds (HRN1-HRN11) show promising optoelectronic qualities with much lower energy gaps (up to 2.01 eV) and absorbed maximum absorption wavelength (940.99 nm). Together with their excellent hole and electron transport capabilities, improved open-circuit voltage values of 1.06–1.34 eV are calculated. The acceptor and donor regions of HRN2, HRN7, and HRN1 exhibit great charge mobility and have the lowest electron reorganization energy. HRN9 has the greatest reorganization energy of hole (<em>λ</em><sub>h</sub>) value among all designed molecules. The work emphasizes designing suitable photovoltaic materials to produce highly efficient solar cell devices.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"186 \",\"pages\":\"Article 109089\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124009855\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009855","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Development of cost-effective diphenylamine substituted hole transporting materials for organic and perovskite solar cells
In recent years, material developments have continued to increase the performances of organic and perovskite solar cells (PSCs). Therefore, herein, we designed (HRN1-HRN11) and characterized eleven new hole transport materials (HTM) for PSCs. A systematic investigation has been conducted to investigate the optoelectrical characteristics of these HTMs. The optical characteristics and structure of these modeled HTMs have been analyzed using density functional theory (DFT) and time-dependent (TD-DFT). Ionization potential, electron density difference (EDD), electron and hole reorganizational energies, charge transfer analysis, transition density matrix, and molecular electrostatic potential analysis were performed to investigate the potential of these designed series (HRN1-HRN11) for PSCs. In comparison to the synthetic reference molecule (HRN), which has a band gap of 3.64 eV and a wavelength of 388.69 nm, the newly developed compounds (HRN1-HRN11) show promising optoelectronic qualities with much lower energy gaps (up to 2.01 eV) and absorbed maximum absorption wavelength (940.99 nm). Together with their excellent hole and electron transport capabilities, improved open-circuit voltage values of 1.06–1.34 eV are calculated. The acceptor and donor regions of HRN2, HRN7, and HRN1 exhibit great charge mobility and have the lowest electron reorganization energy. HRN9 has the greatest reorganization energy of hole (λh) value among all designed molecules. The work emphasizes designing suitable photovoltaic materials to produce highly efficient solar cell devices.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.