为有机和过氧化物太阳能电池开发具有成本效益的二苯胺取代型空穴传输材料

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hira Naz , Muhammad Adnan , Zobia Irshad , Riaz Hussain , Hany W. Darwish , Junaid Yaqoob
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引用次数: 0

摘要

近年来,材料的发展不断提高有机和过氧化物太阳能电池(PSCs)的性能。因此,我们在本文中设计(HRN1-HRN11)并表征了 11 种用于 PSC 的新型空穴传输材料(HTM)。我们对这些 HTM 的光电特性进行了系统研究。利用密度泛函理论(DFT)和时变(TD-DFT)分析了这些模型 HTM 的光学特性和结构。通过电离势、电子密度差(EDD)、电子和空穴重组能、电荷转移分析、过渡密度矩阵和分子静电势分析,研究了这些设计系列(HRN1-HRN11)用于 PSCs 的潜力。与能带隙为 3.64 eV、波长为 388.69 nm 的合成参考分子(HRN)相比,新开发的化合物(HRN1-HRN11)具有更低的能隙(高达 2.01 eV)和吸收最大波长(940.99 nm),显示出良好的光电特性。加上其出色的空穴和电子传输能力,计算得出的开路电压值提高到了 1.06-1.34 eV。HRN2、HRN7 和 HRN1 的受体和供体区具有很高的电荷迁移率和最低的电子重组能。在所有设计的分子中,HRN9 的空穴重组能(λh)值最大。这项工作强调设计合适的光伏材料,以生产高效太阳能电池器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Development of cost-effective diphenylamine substituted hole transporting materials for organic and perovskite solar cells

Development of cost-effective diphenylamine substituted hole transporting materials for organic and perovskite solar cells
In recent years, material developments have continued to increase the performances of organic and perovskite solar cells (PSCs). Therefore, herein, we designed (HRN1-HRN11) and characterized eleven new hole transport materials (HTM) for PSCs. A systematic investigation has been conducted to investigate the optoelectrical characteristics of these HTMs. The optical characteristics and structure of these modeled HTMs have been analyzed using density functional theory (DFT) and time-dependent (TD-DFT). Ionization potential, electron density difference (EDD), electron and hole reorganizational energies, charge transfer analysis, transition density matrix, and molecular electrostatic potential analysis were performed to investigate the potential of these designed series (HRN1-HRN11) for PSCs. In comparison to the synthetic reference molecule (HRN), which has a band gap of 3.64 eV and a wavelength of 388.69 nm, the newly developed compounds (HRN1-HRN11) show promising optoelectronic qualities with much lower energy gaps (up to 2.01 eV) and absorbed maximum absorption wavelength (940.99 nm). Together with their excellent hole and electron transport capabilities, improved open-circuit voltage values of 1.06–1.34 eV are calculated. The acceptor and donor regions of HRN2, HRN7, and HRN1 exhibit great charge mobility and have the lowest electron reorganization energy. HRN9 has the greatest reorganization energy of hole (λh) value among all designed molecules. The work emphasizes designing suitable photovoltaic materials to produce highly efficient solar cell devices.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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