镍装饰的 α-CN 单层对 CO、NO 和 NH₃ 气体的吸附机理:DFT 和半经典研究的启示

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Heli Mistry , Shardul Vadalkar , Keyur N. Vyas , Prafulla K. Jha
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引用次数: 0

摘要

一氧化碳(CO)、一氧化氮(NO)和氨气(NH3)等有毒气体对健康和环境构成严重威胁。虽然现有的有毒气体监测器成本高昂,但二维(2D)材料因其高表面体积比和高灵敏度而在气体传感应用中大有可为。其中,α-CN 已被确定为气体吸附机制的潜在候选材料。本研究采用基于第一性原理计算的最新密度泛函理论(DFT),研究了α-CN 表面镍(Ni)原子装饰对 CO、NO 和 NH₃ 有毒气体的吸附性能。结果表明,镍装饰显著提高了 α-CN 的吸附性能,吸附能为负值。因此,计算得出的回收时间非常长,这表明镍装饰的 α-CN 更适合去除这些有毒气体,而不是用作传感器。研究人员对α-CN 的结构和电子特性进行了深入分析,包括投影态密度(PDOS)、带状结构、电荷密度图和转移机制。此外,还评估了使用半经典方法计算的功函数和电导率等传感特性,以验证该材料的有效性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Adsorption mechanism of Ni decorated α-CN monolayer towards CO, NO, and NH₃ gases: Insights from DFT and semi-classical studies

Adsorption mechanism of Ni decorated α-CN monolayer towards CO, NO, and NH₃ gases: Insights from DFT and semi-classical studies
Toxic gases such as carbon monoxide (CO), nitric oxide (NO) and ammonia (NH3) pose serious health and environmental risks. While existing toxic gas monitors are costly, two-dimensional (2D) materials have shown promise for gas sensing applications due to their high surface-to-volume ratios and sensitivity. Among these, α-CN has been identified as a potential candidate for gas adsorption mechanisms. This study investigates the adsorption performance α-CN surface with the decoration of nickel (Ni)-atom for CO, NO, and NH₃ toxic gases using state of art density functional theory (DFT) based first principles calculations. The results indicate that the Ni-decoration significantly enhances the adsorption performance of α-CN, as evidenced by highly negative adsorption energies. Therefore, the calculated recovery times are extremely long, suggesting that Ni-decorated α-CN is more suitable for the removal of these toxic gases rather than as a sensor. The structural and electronic properties, including projected density of states (PDOS), band structure, charge density diagrams and transfer mechanisms, have been thoroughly analyzed. Additionally, sensing properties such as work function and electrical conductivity, computed using semi-classical methods, have been evaluated to validate the effectiveness of the material.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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