用于先进光致发光癌症治疗的米托蒽醌共轭石墨烯量子点工程学

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Kenza Elkabiri , Hala Ouarrad , Lalla Btissam Drissi
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引用次数: 0

摘要

本研究探讨了与米托蒽醌(MTX)药物共轭的石墨烯量子点(GQDs)的光电和光致发光特性,旨在增强癌症给药系统。利用 DFT 和 TDDFT 数值模拟,我们研究了 GQD 尺寸和 MTX 耦合位置(C-C、C-O 和 C-N 键)对 DSGQD 物理行为的影响。我们的研究证实,所有结构在能量上都是稳定的,红外光谱中没有负频率就是证明。此外,全局反应性指数结果表明,C-O 共轭结构的化学稳定性最高。官能化导致 H-L 能隙减小,这取决于 MTX 耦合位置和 GQD 大小。重要的是,GQDs 的光学特性基本不受共轭作用的影响,从而保持了其作为药物载体的稳定性。较大的 GQD 系统在近红外(NIR)范围内保持了稳定的吸收和光致发光特性,而较小的系统则表现出从可见光到近红外范围的转变。值得注意的是,具有 C-O 键合的 C48H18 + MTX 体系表现出更优越的光致发光性能,小线宽结果也证实了这一点。这些结果表明,与 MTX 共轭的 GQDs 在癌症靶向治疗方面具有巨大潜力,药物与 GQD 宿主之间的相互作用极小,从而降低了毒性风险。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Engineering mitoxantrone-conjugated graphene quantum dots for advanced photoluminescent cancer therapy
This study investigates the optoelectronic and photoluminescence properties of graphene quantum dots (GQDs) conjugated with the Mitoxantrone (MTX) drug, aiming to enhance cancer drug delivery systems. Using DFT and TDDFT numerical simulations, we examined the impact of GQD size and MTX coupling positions (C–C, C–O, and C–N bonds) on the physical behaviour of DSGQDs. Our study confirm that all structures are energetically stable, as evidenced by the absence of negative frequencies in the IR spectra. Besides, C–O conjugated structures are found to be the most chemically stable as it was shown by global reactivity indices results. Functionalization leads to a reduced H–L energy gap, depending on the MTX coupling position and GQD size. Importantly, the optical properties of GQDs remain largely unaffected by conjugation, maintaining their stability as drug carriers. Larger GQD systems retained stable absorption and photoluminescence characteristics within the near-infrared (NIR) range, while smaller systems exhibited a shift from the visible to the NIR range. Notably, the C48H18 + MTX system with C–O bonding demonstrated superior photoluminescence performance confirmed by the small line width results. These results suggest that GQDs conjugated with MTX hold significant potential for targeted cancer therapy, with minimal interaction between the drug and the GQD host, thereby reducing toxicity risks.
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来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
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