分析和优化增益增强型 N 路径开关电容带通滤波器中由寄生引起的峰值频移

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-10-30 DOI:10.1109/LSSC.2024.3488001

Lei Lei;Zhiming Chen

{"title":"分析和优化增益增强型 N 路径开关电容带通滤波器中由寄生引起的峰值频移","authors":"Lei Lei;Zhiming Chen","doi":"10.1109/LSSC.2024.3488001","DOIUrl":null,"url":null,"abstract":"This letter proposes a \n<inline-formula> <tex-math>$C/g_{m}$ </tex-math></inline-formula>\n method for analyzing the peak frequency shift caused by parasitic parameters in gain-boosted N-path switched-capacitor bandpass filter (GB-BPF). This method eliminates the device width variable, addressing the interdependencies among various parameters in GB-BPF. Numerical solution for peak frequency shift is obtained, and the impact of each variable on frequency shift is accurately quantified. Using the proposed \n<inline-formula> <tex-math>$C/g_{m}$ </tex-math></inline-formula>\n variable, the optimal bias voltage is determined to minimize the peak frequency shift for same parasitic parameters. Additionally, optimization strategies for adjusting the filter capacitance and switching frequency are proposed. Finally, a GB-BPF is implemented in a 90-nm CMOS process. The accuracy of the analysis is verified by comparing the measured and simulated results with the theoretically derived results.","PeriodicalId":13032,"journal":{"name":"IEEE Solid-State Circuits Letters","volume":"7 ","pages":"339-342"},"PeriodicalIF":2.2000,"publicationDate":"2024-10-30","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Analysis and Optimization of Parasitics-Induced Peak Frequency Shift in Gain-Boosted N-Path Switched-Capacitor Bandpass Filter\",\"authors\":\"Lei Lei;Zhiming Chen\",\"doi\":\"10.1109/LSSC.2024.3488001\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This letter proposes a \\n<inline-formula> <tex-math>$C/g_{m}$ </tex-math></inline-formula>\\n method for analyzing the peak frequency shift caused by parasitic parameters in gain-boosted N-path switched-capacitor bandpass filter (GB-BPF). This method eliminates the device width variable, addressing the interdependencies among various parameters in GB-BPF. Numerical solution for peak frequency shift is obtained, and the impact of each variable on frequency shift is accurately quantified. Using the proposed \\n<inline-formula> <tex-math>$C/g_{m}$ </tex-math></inline-formula>\\n variable, the optimal bias voltage is determined to minimize the peak frequency shift for same parasitic parameters. Additionally, optimization strategies for adjusting the filter capacitance and switching frequency are proposed. Finally, a GB-BPF is implemented in a 90-nm CMOS process. The accuracy of the analysis is verified by comparing the measured and simulated results with the theoretically derived results.\",\"PeriodicalId\":13032,\"journal\":{\"name\":\"IEEE Solid-State Circuits Letters\",\"volume\":\"7 \",\"pages\":\"339-342\"},\"PeriodicalIF\":2.2000,\"publicationDate\":\"2024-10-30\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Solid-State Circuits Letters\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10738378/\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Solid-State Circuits Letters","FirstCategoryId":"1085","ListUrlMain":"https://ieeexplore.ieee.org/document/10738378/","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"COMPUTER SCIENCE, HARDWARE & ARCHITECTURE","Score":null,"Total":0}

引用次数: 0

摘要

本文提出了一种 $C/g_{m}$ 方法，用于分析增益增强 N 路径开关电容带通滤波器（GB-BPF）中寄生参数引起的峰值频率偏移。该方法消除了器件宽度变量，解决了 GB-BPF 中各种参数之间的相互依存关系。得到了峰值频移的数值解，并准确量化了各变量对频移的影响。利用提出的 $C/g_{m}$ 变量，确定了最佳偏置电压，使相同寄生参数下的峰值频移最小。此外，还提出了调整滤波器电容和开关频率的优化策略。最后，在 90 纳米 CMOS 工艺中实现了 GB-BPF。通过比较测量和模拟结果与理论推导结果，验证了分析的准确性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Analysis and Optimization of Parasitics-Induced Peak Frequency Shift in Gain-Boosted N-Path Switched-Capacitor Bandpass Filter

This letter proposes a

$C/g_{m}$

method for analyzing the peak frequency shift caused by parasitic parameters in gain-boosted N-path switched-capacitor bandpass filter (GB-BPF). This method eliminates the device width variable, addressing the interdependencies among various parameters in GB-BPF. Numerical solution for peak frequency shift is obtained, and the impact of each variable on frequency shift is accurately quantified. Using the proposed

$C/g_{m}$

variable, the optimal bias voltage is determined to minimize the peak frequency shift for same parasitic parameters. Additionally, optimization strategies for adjusting the filter capacitance and switching frequency are proposed. Finally, a GB-BPF is implemented in a 90-nm CMOS process. The accuracy of the analysis is verified by comparing the measured and simulated results with the theoretically derived results.

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量