利用 ZnGa2O4/p-Si 异质结光电二极管实现从紫外到近红外的强光检测及其在光电物理不可克隆功能中的应用（Adv.）

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-11-09 DOI:10.1002/aelm.202470035

Wangmyung Choi, Seungme Kang, Yeong Jae Kim, Youngwoo Yoo, Wonjun Shin, Yeongkwon Kim, Young-Joon Kim, Byung Chul Jang, Jaehyun Hur, Hocheon Yoo

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引用次数: 0

摘要

利用宽带 ZnGa2O4/p-Si 异质结光电二极管进行稳健的光检测，实现物理上不可克隆的功能在文章编号 2400649 中，Hocheon Yoo 及其合作者通过在 p-Si 上应用具有低折射率的紫外线响应型 ZnGa2O4 薄膜，展示了宽带检测性能。得益于 ZnGa2O4 的化学稳定性，该器件在各种环境中都表现出了稳定性。通过引入不同的自组装单层来诱导不规则掺杂，研究团队结合电压和波长实现了多键生成。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Robust Light Detection from Ultraviolet to Near-Infrared with ZnGa2O4/p-Si Heterojunction Photodiode and Its Application for Optoelectronic Physically Unclonable Functions (Adv. Electron. Mater. 11/2024)

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Robust Light Detection with Broadband ZnGa₂O₄/p-Si Heterojunction Photodiode for Physically Unclonable Functions

In article number 2400649, Hocheon Yoo and co-workers demonstrate broadband detection performance by applying a UV-responsive ZnGa₂O₄ film with a low refractive index on p-Si. The device exhibited stability in various environments, benefiting from the chemical robustness of ZnGa₂O₄. By introducing different self-assembled monolayers to induce irregular doping, the research team enabled multi-key generation through a combination of voltage and wavelength.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.