阐明整合了铁(II)-三吡啶偶氮络合物的膜结中的开关机制

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Camille Jubert Tomasso, Thomas Petenzi, Anna Tidu, Rassen Boukraa, Sofia Russi, Giorgio Mattana, Christelle Gautier, Tony Breton, Ivan T. Lucas, Hubert Perrot, Laure Fillaud
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引用次数: 0

摘要

本文报告了一种通过有机层重氮电嫁接和喷墨打印顶部电极来制作垂直金属/分子/金属记忆结的新方法。相关分子是一种带有重氮锚定基团的三联吡啶配体的 FeII 配位复合物。由此产生的结具有记忆行为,其特点是高导通/关断比和可塑性。通过应用紫外可见光和拉曼时间分辨光谱电化学等先进技术,该研究证明了重氮电接枝产生的可切换偶氮键在记忆行为中的重要作用。
本文章由计算机程序翻译,如有差异,请以英文原文为准。

Elucidation of Switching Mechanisms in Memristive Junctions Integrating a Iron(II)-Ter Pyridine Diazoted Complex

Elucidation of Switching Mechanisms in Memristive Junctions Integrating a Iron(II)-Ter Pyridine Diazoted Complex
An original way of elaborating vertical metal/molecules/metal memristive junctions through diazonium electrografting of the organic layer and inkjet-printed top electrodes is reported here. The molecule of interest is a FeII coordination complex with ter-pyridine ligands, having a diazonium anchoring group. The resulting junction exhibits a memristive behavior characterized by a high ON/OFF ratio and plasticity property. Through the application of advanced techniques such as UV–vis and Raman time-resolved spectroelectrochemistry, the study demonstrates the significant role of switchable azo bonds derived from diazo electrografting in memristive behavior.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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