一种基于三耦合谐振的太赫兹开关，利用具有超低插入损耗和固有 ESD 保护功能的尾部传输线

IF 3.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Terahertz Science and Technology Pub Date : 2024-08-29 DOI:10.1109/TTHZ.2024.3451625

Nengxu Zhu;Yiting Zhang;Fanyi Meng

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引用次数: 0

摘要

本文介绍了一种采用三耦合谐振拓扑结构的基于电池的单刀单掷（SPST）开关。由于物理隔离结构的固有特性以及隔离增强型尾部传输线的引入，该开关具有低插入损耗（IL）、高线性度和静电放电（ESD）自我保护功能。该开关采用 0.13μm SiGe BiCMOS 工艺实现，在 228 GHz 时最小插入损耗为 1.35 dB，在 200 至 250 GHz 时隔离度为 17-23 dB，静电放电脉冲大于 8 kV HBM，适用于毫米波和太赫兹无线通信和成像系统。该芯片的核心面积为 0.0078 mm2，在同类 SPST 开关中具有最高的性能指标。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A Tricoupled Resonant-Based Terahertz Switch Utilizing Tail-Transmission-Line with Ultra-Low Insertion Loss and Intrinsic ESD-Protection

This letter presents a cell-based single-pole single-throw (SPST) switch adopting tricoupled resonant topology. Due to the inherent characteristics of the physically isolated structure and the introduction of isolation-enhanced tail-transmission-lines, the switch features low insertion loss (IL), high linearity, and electrostatic discharge (ESD) self-protection. Implemented in 0.13- μ m SiGe BiCMOS process, the switch achieves a minimum IL of 1.35 dB @ 228 GHz, 17–23 dB isolation from 200 to 250 GHz, and >8 kV HBM ESD pulse, which is suitable for millimeter-wave and terahertz wireless communication and imaging systems. The chip occupies a core area of 0.0078 mm ² and exhibits the highest figure of merit among similar SPST switches.

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来源期刊

IEEE Transactions on Terahertz Science and Technology ENGINEERING, ELECTRICAL & ELECTRONIC-OPTICS

CiteScore

7.10

自引率

9.40%

发文量

102

期刊介绍： IEEE Transactions on Terahertz Science and Technology focuses on original research on Terahertz theory, techniques, and applications as they relate to components, devices, circuits, and systems involving the generation, transmission, and detection of Terahertz waves.