{"title":"90Sr/90Y-n-Si/ZnO 光伏电池的实验和理论研究以及同质结光伏电池性能的理论预测","authors":"Zohreh Movahedian, Hossein Tavakoli-Anbaran","doi":"10.1016/j.mssp.2024.109059","DOIUrl":null,"url":null,"abstract":"<div><div>Today, betavoltaic batteries has been considered due to their high energy density and long life for operating electrical systems in inaccessible and hostile environments. Conventional electrochemical batteries, despite their widespread use in electronic devices, have a limited lifetime and tend to degrade in extreme environmental conditions. The current paper pursues three goals. The first goal is to the experimental and theoretical investigation of a n-Si/ZnO heterojunction betavoltaic battery based on <sup>90</sup>Sr/<sup>90</sup>Y source. The second goal is to optimize ZnO, SnO<sub>2</sub>, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by Monte Carlo simulation (MCNP code). The third goal is to present a new approach for estimating the standard error in calculating the parameters of betavoltaic batteries. In order to fabrication of a n-Si/ZnO heterojunction, the ZnO nanospheres were placed on the n-Si (100) substrate using chemical bath deposition (CBD) technology. The Al and Au electrodes were deposited on the formed sample. Then this sample was exposed to the radiation of an external <sup>90</sup>Sr/<sup>90</sup>Y source with an activity of 12.8 mCi. The experimental values obtained for the short circuit current (I<sub>sc</sub>), open circuit voltage (V<sub>oc</sub>), efficiency (η), and maximum output power (P<sub>max</sub>) were 0.047 μA, 0.015 V, 3.4 × 10<sup>−4</sup> percent, and 0.141 nW, respectively. To compare with the experiment, we investigated the n-Si/ZnO betavoltaic cell by MCNP code. In the simulation, the beta spectrum of the <sup>90</sup>Sr/<sup>90</sup>Y source was considered. The calculated theoretical values for I<sub>sc</sub>, V<sub>oc</sub>, η, and P<sub>max</sub> were 0.063 μA, 0.020 V, 6.4 × 10<sup>−4</sup> percent, and 0.265 nW, respectively. The experimental results show that the simulation results can be valid. In the optimization of ZnO, SnO<sub>2</sub>, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by MCNP code, it was found that the I<sub>sc</sub>, V<sub>oc</sub>, η, and P<sub>max</sub> of the cubical model are better compared to the planar model. In the cubical model, P<sub>max</sub> of ZnO, SnO<sub>2</sub>, BN, and diamond betavoltaic batteries is 2633.34 nW ± 0.16 %, 1670.49 nW ± 0.15 %, 198.20 nW ± 0.17 %, and 1315.24 nW ± 0.15 %, respectively. In other words, P<sub>max</sub> of the ZnO betavoltaic battery is about 58 %, 1229 %, and 100 % more than P<sub>max</sub> of SnO<sub>2</sub>, BN, and diamond betavoltaic batteries, respectively. P<sub>max</sub> of the SnO<sub>2</sub> betavoltaic battery is about 743 % and 27 % more than P<sub>max</sub> of BN and diamond betavoltaic batteries, respectively. The results show that ZnO and SnO<sub>2</sub> betavoltaic batteries can perform better compared to BN and diamond betavoltaic batteries. Also, their growth process is less expensive compared to BN and diamond.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109059"},"PeriodicalIF":4.2000,"publicationDate":"2024-11-03","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Experimental and theoretical study of 90Sr/90Y-n-Si/ZnO betavoltaic battery and theoretical prediction of homojunction betavoltaic cells performance\",\"authors\":\"Zohreh Movahedian, Hossein Tavakoli-Anbaran\",\"doi\":\"10.1016/j.mssp.2024.109059\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Today, betavoltaic batteries has been considered due to their high energy density and long life for operating electrical systems in inaccessible and hostile environments. Conventional electrochemical batteries, despite their widespread use in electronic devices, have a limited lifetime and tend to degrade in extreme environmental conditions. The current paper pursues three goals. The first goal is to the experimental and theoretical investigation of a n-Si/ZnO heterojunction betavoltaic battery based on <sup>90</sup>Sr/<sup>90</sup>Y source. The second goal is to optimize ZnO, SnO<sub>2</sub>, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by Monte Carlo simulation (MCNP code). The third goal is to present a new approach for estimating the standard error in calculating the parameters of betavoltaic batteries. In order to fabrication of a n-Si/ZnO heterojunction, the ZnO nanospheres were placed on the n-Si (100) substrate using chemical bath deposition (CBD) technology. The Al and Au electrodes were deposited on the formed sample. Then this sample was exposed to the radiation of an external <sup>90</sup>Sr/<sup>90</sup>Y source with an activity of 12.8 mCi. The experimental values obtained for the short circuit current (I<sub>sc</sub>), open circuit voltage (V<sub>oc</sub>), efficiency (η), and maximum output power (P<sub>max</sub>) were 0.047 μA, 0.015 V, 3.4 × 10<sup>−4</sup> percent, and 0.141 nW, respectively. To compare with the experiment, we investigated the n-Si/ZnO betavoltaic cell by MCNP code. In the simulation, the beta spectrum of the <sup>90</sup>Sr/<sup>90</sup>Y source was considered. The calculated theoretical values for I<sub>sc</sub>, V<sub>oc</sub>, η, and P<sub>max</sub> were 0.063 μA, 0.020 V, 6.4 × 10<sup>−4</sup> percent, and 0.265 nW, respectively. The experimental results show that the simulation results can be valid. In the optimization of ZnO, SnO<sub>2</sub>, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by MCNP code, it was found that the I<sub>sc</sub>, V<sub>oc</sub>, η, and P<sub>max</sub> of the cubical model are better compared to the planar model. In the cubical model, P<sub>max</sub> of ZnO, SnO<sub>2</sub>, BN, and diamond betavoltaic batteries is 2633.34 nW ± 0.16 %, 1670.49 nW ± 0.15 %, 198.20 nW ± 0.17 %, and 1315.24 nW ± 0.15 %, respectively. In other words, P<sub>max</sub> of the ZnO betavoltaic battery is about 58 %, 1229 %, and 100 % more than P<sub>max</sub> of SnO<sub>2</sub>, BN, and diamond betavoltaic batteries, respectively. P<sub>max</sub> of the SnO<sub>2</sub> betavoltaic battery is about 743 % and 27 % more than P<sub>max</sub> of BN and diamond betavoltaic batteries, respectively. The results show that ZnO and SnO<sub>2</sub> betavoltaic batteries can perform better compared to BN and diamond betavoltaic batteries. Also, their growth process is less expensive compared to BN and diamond.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"186 \",\"pages\":\"Article 109059\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-03\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124009557\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009557","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Experimental and theoretical study of 90Sr/90Y-n-Si/ZnO betavoltaic battery and theoretical prediction of homojunction betavoltaic cells performance
Today, betavoltaic batteries has been considered due to their high energy density and long life for operating electrical systems in inaccessible and hostile environments. Conventional electrochemical batteries, despite their widespread use in electronic devices, have a limited lifetime and tend to degrade in extreme environmental conditions. The current paper pursues three goals. The first goal is to the experimental and theoretical investigation of a n-Si/ZnO heterojunction betavoltaic battery based on 90Sr/90Y source. The second goal is to optimize ZnO, SnO2, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by Monte Carlo simulation (MCNP code). The third goal is to present a new approach for estimating the standard error in calculating the parameters of betavoltaic batteries. In order to fabrication of a n-Si/ZnO heterojunction, the ZnO nanospheres were placed on the n-Si (100) substrate using chemical bath deposition (CBD) technology. The Al and Au electrodes were deposited on the formed sample. Then this sample was exposed to the radiation of an external 90Sr/90Y source with an activity of 12.8 mCi. The experimental values obtained for the short circuit current (Isc), open circuit voltage (Voc), efficiency (η), and maximum output power (Pmax) were 0.047 μA, 0.015 V, 3.4 × 10−4 percent, and 0.141 nW, respectively. To compare with the experiment, we investigated the n-Si/ZnO betavoltaic cell by MCNP code. In the simulation, the beta spectrum of the 90Sr/90Y source was considered. The calculated theoretical values for Isc, Voc, η, and Pmax were 0.063 μA, 0.020 V, 6.4 × 10−4 percent, and 0.265 nW, respectively. The experimental results show that the simulation results can be valid. In the optimization of ZnO, SnO2, BN, and diamond homojunction betavoltaic cells in two planar and cubical models by MCNP code, it was found that the Isc, Voc, η, and Pmax of the cubical model are better compared to the planar model. In the cubical model, Pmax of ZnO, SnO2, BN, and diamond betavoltaic batteries is 2633.34 nW ± 0.16 %, 1670.49 nW ± 0.15 %, 198.20 nW ± 0.17 %, and 1315.24 nW ± 0.15 %, respectively. In other words, Pmax of the ZnO betavoltaic battery is about 58 %, 1229 %, and 100 % more than Pmax of SnO2, BN, and diamond betavoltaic batteries, respectively. Pmax of the SnO2 betavoltaic battery is about 743 % and 27 % more than Pmax of BN and diamond betavoltaic batteries, respectively. The results show that ZnO and SnO2 betavoltaic batteries can perform better compared to BN and diamond betavoltaic batteries. Also, their growth process is less expensive compared to BN and diamond.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.