通过脉冲反应磁控溅射沉积的半导体 WO3 薄膜

IF 4.2 3区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

Materials Science in Semiconductor Processing Pub Date : 2024-11-02 DOI:10.1016/j.mssp.2024.109034

A. Písaříková , H. Krýsová , A. Kapran , P. Písařík , M. Čada , J. Olejníček , R. Hippler , Z. Hubička

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引用次数: 0

摘要

研究了一种脉冲反应磁控溅射系统，该系统采用钨靶和氩氧混合气体作为源，用于在钠钙玻璃基片和带有透明导电 SnO2:F (FTO) 电极的玻璃上沉积半导体 WO3 薄膜。反应溅射过程在 HiPIMS 模式下进行，低脉冲重复频率 fp ≈ 50-100 Hz，HiPIMS 放电 Ton = 100 μs 脉冲持续时间短。研究的第二种模式是中频（MF）磁控管放电，脉冲频率 fp = 40 kHz，脉冲长度 Ton = 15 μs。利用频率为 fprobe = 350 kHz 的平面射频探头和带有偏置集电极的栅格 QCM，对 HiPIMS 和 MF 模式的等离子体参数进行了研究。两种脉冲反应磁控溅射放电模式下的离子密度 ni 和尾电子温度 (Te) 都是以时间分辨率测定的。在反应式 HiPIMS 模式下，最大值 ni ≈ 5 - 1017 m-3，而在反应式 MF（40 kHz）模式下，最大值 ni ≈ 7 - 1016 m-3。针对不同的 (QO2) 值，测定了反应式 HiPIMS 中溅射粒子的电离度，发现其范围为 ri ≈ 0.1-0.3。在反应式 HiPIMS 中，QCM 测定的沉积速率实际上与 (QO2) 无关，但在反应式 MF 中，随着 (QO2) 的增加，测得的沉积速率显著下降。在这两种模式下沉积的 WO3 薄膜主要具有单斜晶体结构。在黑暗条件和紫外光照射下测量了光导率、暗导率以及光/暗导率比 (Ld)。在较高（QO2）的条件下，发现 MF 沉积的 WO3 的最大值 Ld ≈ 300，而 HiPIMS 沉积的 WO3 的最大值 Ld ≈ 30。对沉积在 FTO 电极上的 WO3 进行的光电化学测量证实了其 n 型导电性，这些薄膜可用作光电化学电池中的光阳极。MF 沉积的 WO3 薄膜系统地显示出比 HiPIMS 沉积的 WO3 稍高的光电流。研究表明，HiPIMS 和 MF 的最佳光电流出现在 QO2 ≈ 80 sccm 时，并且不能通过进一步增加 (QO2) 来提高。

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Semiconductor WO3 thin films deposited by pulsed reactive magnetron sputtering

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Semiconductor WO3 thin films deposited by pulsed reactive magnetron sputtering

A pulsed reactive magnetron sputtering system with a tungsten target and a gas mixture of argon and oxygen was investigated as a source for the deposition of semiconductor WO₃ thin films on soda lime glass substrates and on the glass with transparent conductive SnO₂:F (FTO) electrode. The reactive sputtering process was performed in HiPIMS mode with low pulse repetition frequency f_p ≈ 50–100 Hz and short pulse duration in HiPIMS discharge T_on = 100 μs. The second mode investigated was the mid-frequency (MF) magnetron discharge with pulse frequency f_p = 40 kHz and pulse length T_on = 15 μs. The plasma parameters were investigated for both HiPIMS and MF modes using the planar RF probe operating at the frequency f_probe = 350 kHz and the grid QCM with biased collector electrode. Ion density n_i and tail electron temperature (T_e) were determined in both pulsed reactive magnetron sputtering discharge modes with time resolution. The maximum value n_i ≈ 5 · 10¹⁷ m⁻³ was found in the reactive HiPIMS mode, and the maximum value n_i ≈ 7 · 10¹⁶ m⁻³ was found in the reactive MF (40 kHz) mode. The degree of ionization of sputtered particles in reactive HiPIMS was determined for different values of (Q_O2) and was found to be in the range of r_i ≈ 0.1–0.3. The deposition rate determined by QCM in reactive HiPIMS was practically independent on (Q_O2), but in the case of reactive MF, the measured deposition rate decreased significantly with increasing (Q_O2). The WO₃ films deposited in both modes have a predominantly monoclinic crystal structure. The light and dark conductivity and the light/dark conductivity ratio (L_d) were measured under dark conditions and UV light illumination. At higher (Q_O2), the maximum value of L_d ≈ 300 was found for MF deposited WO₃ and the maximum value of L_d ≈ 30 was found for HiPIMS deposited WO₃. The photoelectrochemical measurement of WO₃ deposited on FTO electrodes confirmed the n-type conductivity, and these films functioned as photoanodes in photoelectrochemical cells. MF deposited WO₃ films systematically exhibited slightly higher photocurrents than HiPIMS deposited WO₃. It was shown that these optimum photocurrents for HiPIMS and MF were found at Q_O2 ≈ 80 sccm and could not be improved by further increasing of (Q_O2).

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来源期刊

Materials Science in Semiconductor Processing 工程技术-材料科学：综合

CiteScore

8.00

自引率

4.90%

发文量

780

审稿时长

42 days

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