{"title":"具有超高载流子迁移率的新型 Janus α-Au4XY(X/Y = S、Se、Te)单层:第一原理研究","authors":"","doi":"10.1016/j.mssp.2024.109045","DOIUrl":null,"url":null,"abstract":"<div><div>In this paper, we theoretically propose a series of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY (X/Y = S, Se, Te; X <span><math><mo>≠</mo></math></span> Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers have a structurally stable and can be synthesized experimentally. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY are highly sensitive to the biaxial strains <span><math><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub></math></span>, particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY at <span><math><mrow><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>=</mo><mo>−</mo><mn>6</mn><mtext>%</mtext></mrow></math></span>. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit superior transport characteristics with the electron mobility reaching up to <span><math><mrow><mn>3</mn><mo>.</mo><mn>20</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V<sup>−1</sup>s<sup>−1</sup> (<span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>SSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":null,"pages":null},"PeriodicalIF":4.2000,"publicationDate":"2024-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study\",\"authors\":\"\",\"doi\":\"10.1016/j.mssp.2024.109045\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>In this paper, we theoretically propose a series of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY (X/Y = S, Se, Te; X <span><math><mo>≠</mo></math></span> Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers have a structurally stable and can be synthesized experimentally. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY are highly sensitive to the biaxial strains <span><math><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub></math></span>, particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY at <span><math><mrow><msub><mrow><mi>ɛ</mi></mrow><mrow><mi>x</mi><mi>y</mi></mrow></msub><mo>=</mo><mo>−</mo><mn>6</mn><mtext>%</mtext></mrow></math></span>. Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY monolayers exhibit superior transport characteristics with the electron mobility reaching up to <span><math><mrow><mn>3</mn><mo>.</mo><mn>20</mn><mo>×</mo><mn>1</mn><msup><mrow><mn>0</mn></mrow><mrow><mn>5</mn></mrow></msup></mrow></math></span> cm<span><math><msup><mrow></mrow><mrow><mn>2</mn></mrow></msup></math></span>V<sup>−1</sup>s<sup>−1</sup> (<span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>SSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus <span><math><mi>α</mi></math></span>-Au<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>XY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-11-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124009417\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009417","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Novel Janus α-Au4XY (X/Y = S, Se, Te) monolayers with ultra-high carrier mobility: A first-principles study
In this paper, we theoretically propose a series of Janus -AuXY (X/Y = S, Se, Te; X Y) monolayers and investigate their structural stability, electronic features, and transport properties based on first-principle calculations. It is indicated that Janus -AuXY monolayers have a structurally stable and can be synthesized experimentally. Janus -AuXY monolayers exhibit a low Young’s modulus and their mechanical features are slightly anisotropic. At the ground state, Janus -AuXY monolayers possess semiconducting characteristics with very steep band dispersions near the conduction band minimum, which is expected to ultra-high electron mobility. The electronic features of Janus -AuXY are highly sensitive to the biaxial strains , particularly the applied compressive biaxial strains. Interestingly, the transitions from the semiconductor to the metal phases are observed in all three configurations of -AuXY at . Janus -AuXY monolayers exhibit superior transport characteristics with the electron mobility reaching up to cmV−1s−1 (-AuSSe monolayer). Our findings not only explore the outstanding electronic and transport features of Janus -AuXY nanostructures but also indicate their potential applications in nanoelectronics and nanoelectromechanical devices.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.