Synergistic effect of indium doping on thermoelectric performance of cubic GeTe-based thin films

Germanium Telluride (GeTe) has been widely explored as a promising lead-free thermoelectric material in its rhombohedral and cubic phases. However, the structural transition between these two phases at ∼700 K causes an abrupt change of thermal expansion coefficient, challenging its broader practical applications. Also, as characterized by multi-valence bands and strong anharmonic interaction, the high-temperature cubic phase exhibits a higher power factor, lower thermal conductivity, and ultimately superior thermoelectric performance than its rhombohedral counterpart. Prompted by these, in this work, the cubic phase of Ge_0.9Sb_0.1Te (presented as GeSbTe in the following content) nanocrystalline thin film is successfully realized by RF sputtering followed by post-annealing treatment. Additionally, indium, as an electron donor to the germanium site and an effective scattering center, further moderates carrier concentration, enhances the Seebeck coefficient and reduces thermal conductivity. The optimal composition achieves an estimated peak $zT$ of ∼1.95 and an estimated average $zT$ of ∼1.11 within the temperature range of 300 K–575 K, showcasing GeTe as a compelling candidate for applications close to room temperature.