基于空洞嵌入式绝缘体硅技术的全栅极 MOSFET 的次阈值扭结效应

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-11 DOI:10.1109/JEDS.2024.3478750

Yuxin Liu;Qiang Liu;Jin Chen;Zhiqiang Mu;Xing Wei;Wenjie Yu

{"title":"基于空洞嵌入式绝缘体硅技术的全栅极 MOSFET 的次阈值扭结效应","authors":"Yuxin Liu;Qiang Liu;Jin Chen;Zhiqiang Mu;Xing Wei;Wenjie Yu","doi":"10.1109/JEDS.2024.3478750","DOIUrl":null,"url":null,"abstract":"The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as \n<inline-formula> <tex-math>$V_{\\mathrm { d}}$ </tex-math></inline-formula>\n increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at \n<inline-formula> <tex-math>$V_{\\mathrm { d}} {=} 4.5$ </tex-math></inline-formula>\nV under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-10-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10714381","citationCount":"0","resultStr":"{\"title\":\"Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology\",\"authors\":\"Yuxin Liu;Qiang Liu;Jin Chen;Zhiqiang Mu;Xing Wei;Wenjie Yu\",\"doi\":\"10.1109/JEDS.2024.3478750\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as \\n<inline-formula> <tex-math>$V_{\\\\mathrm { d}}$ </tex-math></inline-formula>\\n increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at \\n<inline-formula> <tex-math>$V_{\\\\mathrm { d}} {=} 4.5$ </tex-math></inline-formula>\\nV under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-10-11\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10714381\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10714381/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10714381/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

我们在空心嵌入式硅绝缘体（VESOI）衬底上制造的 GAA 器件通过实验验证了栅极环绕（GAA）MOSFET 的扭结效应。在这种 VESOI GAA 器件中，随着 $V_{\mathrm { d}}$ 的增加，阈下摆幅 (SS) 出现了一致且有利的下降，这在采用其他栅极结构的器件中很少见。特别是，器件的 SS 在 $V_{\mathrm { d}} 时达到 ~0.1mV/dec 的最小值，并且没有明显的滞后窗口。{=}4.5$ V 的环境条件下。进一步的器件模拟有力地证实了 GAA 对无滞后扭结过程的独特可控性。这些发现有助于更好地理解 GAA 器件中的扭结行为，从而提高其应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Subthreshold Kink Effect in Gate-All-Around MOSFETs Based on Void Embedded Silicon on Insulator Technology

The kink effect of gate-all-around (GAA) MOSFET has been experimentally validated by our GAA devices fabricated on a void embedded silicon-on-insulator (VESOI) substrate. In this VESOI GAA device, a consistent and favorable decrease in subthreshold swing (SS) is observed as

$V_{\mathrm { d}}$

increases, which has rarely been reported in devices with other gate structures. In particular, the SS of the device reaches the minimum ~0.1mV/dec with no discernable hysteresis window at

$V_{\mathrm { d}} {=} 4.5$

V under ambient condition. Further device simulation strongly confirms the unique role of the GAA controllability over the hysteresis-free kink process. These findings contribute to a better understanding of kink behaviors within GAA device for potential application.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.