基于表面电位的栅极全方位隧道场效应晶体管漏极电流模型

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-10 DOI:10.1109/JEDS.2024.3477928

Zhanhang Chen;Haoliang Shan;Ziyi Ding;Xia Wu;Xiaolin Cen;Xiaoyu Ma;Wanling Deng;Junkai Huang

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引用次数: 0

摘要

本文提出并验证了纳米线(NW)全栅极(GAA)隧道场效应晶体管(TFET)从源极到漏极表面电势的闭式分析统一模型。首先，证明了 GAA-TFET 中双调制效应的正确性。在此基础上，模型全面考虑了沟道耗尽区、漏极耗尽区和沟道反转电荷的影响。此外，基于推导出的表面电势表达式，提出了 GAA-TFET 的紧凑型电流模型，并讨论了伏极传导--器件模型完整性的一个重要因素。该模型的准确性和灵活性通过 TCAD 仿真和 NW-GAA-TFET 的测量数据得到了验证，结果令人鼓舞。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Surface-Potential-Based Drain Current Model of Gate-All-Around Tunneling FETs

A closed-form, analytical, and unified model for the surface potential from source to drain in nanowire (NW) gate-all-around (GAA) tunneling field effect transistors (TFETs) is proposed and validated. Foremost, the correctness of the dual modulation effect in GAA-TFETs is demonstrated. Building on that, the model comprehensively considers the effects of the channel depletion region, drain depletion region, and channel inversion charges. Furthermore, a compact current model for GAA-TFETs, based on the derived surface potential expression, is presented, with a discussion on ambipolar conduction—an essential factor for device model integrity. The model’s accuracy and flexibility are validated through TCAD simulations and measurement data from NW-GAA-TFETs, yielding promising results.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.