采用复合沟道和双面掺杂技术的高输出功率和效率 300-GHz 频带 InP 型 MOS-HEMT 功率放大器

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-10-18 DOI:10.1109/JEDS.2024.3483305

Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Yasuhiro Nakasha;Masaru Sato;Toshihiro Ohki

{"title":"采用复合沟道和双面掺杂技术的高输出功率和效率 300-GHz 频带 InP 型 MOS-HEMT 功率放大器","authors":"Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Yasuhiro Nakasha;Masaru Sato;Toshihiro Ohki","doi":"10.1109/JEDS.2024.3483305","DOIUrl":null,"url":null,"abstract":"This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility transistors (HEMTs) with composite-channel (CC) and double-side-doping (DD) techniques. The CC-DD structure obtained high output current and low channel resistance due to the improved carrier density and mobility. W-band load-pull measurement revealed the drastically improved output power density of CC-DD structure compared with that of singlechannel DD structure. The 2-stage cascaded, 4-way, and 16-way PA-MMICs were designed based on stacked common-gate transistors with current reuse topology. The cascaded PA-MMIC exhibited a poweradded efficiency (PAE) of 7.8%, and the 16-way PA-MMIC exhibited an output power of 16.9 dBm. These values are the highest among all the values reported for the 300-GHz band PA-MMICs. The 4-way PA-MMIC achieved a high output power of 13.6–14.6 dBm and high PAE of 4.8%–6.3% simultaneously at the entire 300-GHz band.","PeriodicalId":13210,"journal":{"name":"IEEE Journal of the Electron Devices Society","volume":null,"pages":null},"PeriodicalIF":2.0000,"publicationDate":"2024-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10722855","citationCount":"0","resultStr":"{\"title\":\"High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping\",\"authors\":\"Yusuke Kumazaki;Shiro Ozaki;Naoya Okamoto;Naoki Hara;Yasuhiro Nakasha;Masaru Sato;Toshihiro Ohki\",\"doi\":\"10.1109/JEDS.2024.3483305\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility transistors (HEMTs) with composite-channel (CC) and double-side-doping (DD) techniques. The CC-DD structure obtained high output current and low channel resistance due to the improved carrier density and mobility. W-band load-pull measurement revealed the drastically improved output power density of CC-DD structure compared with that of singlechannel DD structure. The 2-stage cascaded, 4-way, and 16-way PA-MMICs were designed based on stacked common-gate transistors with current reuse topology. The cascaded PA-MMIC exhibited a poweradded efficiency (PAE) of 7.8%, and the 16-way PA-MMIC exhibited an output power of 16.9 dBm. These values are the highest among all the values reported for the 300-GHz band PA-MMICs. The 4-way PA-MMIC achieved a high output power of 13.6–14.6 dBm and high PAE of 4.8%–6.3% simultaneously at the entire 300-GHz band.\",\"PeriodicalId\":13210,\"journal\":{\"name\":\"IEEE Journal of the Electron Devices Society\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":2.0000,\"publicationDate\":\"2024-10-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"https://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=10722855\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Journal of the Electron Devices Society\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10722855/\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Journal of the Electron Devices Society","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10722855/","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

本文利用 InP 基金属氧化物半导体高电子迁移率晶体管 (HEMT)，采用复合沟道 (CC) 和双侧掺杂 (DD) 技术，演示了 300 GHz 频段（252-296 GHz）的高输出功率和高效功率放大器 (PA) 单片微波集成电路 (MMIC)。由于提高了载流子密度和迁移率，CC-DD 结构获得了高输出电流和低沟道电阻。W 波段负载拉动测量显示，与单通道 DD 结构相比，CC-DD 结构的输出功率密度大幅提高。基于电流重用拓扑结构的堆叠共门晶体管设计了 2 级级联、4 路和 16 路 PA-MMIC。级联 PA-MMIC 的功率附加效率 (PAE) 为 7.8%，16 路 PA-MMIC 的输出功率为 16.9 dBm。这些值是 300 GHz 频段 PA-MMIC 所有报告值中最高的。4 路 PA-MMIC 在整个 300-GHz 频段同时实现了 13.6-14.6 dBm 的高输出功率和 4.8%-6.3% 的高 PAE。

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High Output Power and Efficiency 300-GHz Band InP-Based MOS-HEMT Power Amplifiers With Composite-Channel and Double-Side Doping

This paper demonstrated high-output-power and high-efficiency power amplifier (PA) monolithic microwave-integrated circuit (MMIC) at 300-GHz band (252–296 GHz) with the use of InPbased metal–oxide–semiconductor high-electron-mobility transistors (HEMTs) with composite-channel (CC) and double-side-doping (DD) techniques. The CC-DD structure obtained high output current and low channel resistance due to the improved carrier density and mobility. W-band load-pull measurement revealed the drastically improved output power density of CC-DD structure compared with that of singlechannel DD structure. The 2-stage cascaded, 4-way, and 16-way PA-MMICs were designed based on stacked common-gate transistors with current reuse topology. The cascaded PA-MMIC exhibited a poweradded efficiency (PAE) of 7.8%, and the 16-way PA-MMIC exhibited an output power of 16.9 dBm. These values are the highest among all the values reported for the 300-GHz band PA-MMICs. The 4-way PA-MMIC achieved a high output power of 13.6–14.6 dBm and high PAE of 4.8%–6.3% simultaneously at the entire 300-GHz band.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.