Mudasir Younis Sofi, Mohd. Shahid Khan, M. Ajmal Khan
{"title":"利用 Cs2AgMBr6(M = V、Mn、Ni)双卤化物包晶的半金属性和热电洞察力:DFT 研究","authors":"Mudasir Younis Sofi, Mohd. Shahid Khan, M. Ajmal Khan","doi":"10.1016/j.mssp.2024.109023","DOIUrl":null,"url":null,"abstract":"<div><div>Herein, we undertake a detailed exploration of the structural stability, magneto-electronic behavior, and thermoelectric properties of Cs₂AgMBr₆ (M = V, Mn, Ni) halide double perovskites using first-principles approach. The study commences with a meticulous assessment of both structural stability and thermodynamic properties employing various metrics. Energy minimization across different phases, utilizing the Birch-Murnaghan equation of state, confirms the ferromagnetic phase as energetically favoured, supported by Curie-Weiss constants of 98 K, 100 K, and 150 K for V, Mn, and Ni-based perovskites, respectively. Mechanical properties, including hardness, stiffness, ductility, and fracture strength, are derived from the simulated elastic constants, ensuring the mechanical stability of the materials. Electronic structure analysis, performed using the PBE-GGA and GGA + mBJ functionals, reveals that Cs₂AgMBr₆ compounds exhibit half-metallic ferromagnetism, with 100 % spin polarization at the Fermi level. Analysis of the partial density of states highlights the half-metallic ferromagnetic mechanism, confirming predominant ferromagnetic order through parameters such as the exchange splitting energy (Δ<sub>x</sub>), <em>p-d</em> exchange interaction energy (Δ<sub>x</sub>(<em>p-d</em>)), crystal-field energy (<em>E</em><sub>crys</sub>), and exchange constants (N₀α and N₀β). The negative values of the exchange constants further validated the dominant ferromagnetic order in both <em>s-d</em> and <em>p-d</em> interactions, with unpaired electrons contributing magnetic moments of 2 μ<sub>B</sub> for V, 4 μ<sub>B</sub> for Mn, and 1 μ<sub>B</sub> for Ni-based perovskites. Also, the Curie temperatures are calculated as 385 K, 747 K, and 204 K for V, Mn, and Ni-based perovskites. The overall findings, which reveal 100 % spin polarization and high zT values, underscore the significant potential of Cs₂AgMBr₆ halide perovskites for advancing spintronics and thermoelectric applications.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109023"},"PeriodicalIF":4.2000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Harnessing the half-metallicity and thermoelectric insights in Cs2AgMBr6 (M = V, Mn, Ni) double halide perovskites: A DFT study\",\"authors\":\"Mudasir Younis Sofi, Mohd. Shahid Khan, M. Ajmal Khan\",\"doi\":\"10.1016/j.mssp.2024.109023\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Herein, we undertake a detailed exploration of the structural stability, magneto-electronic behavior, and thermoelectric properties of Cs₂AgMBr₆ (M = V, Mn, Ni) halide double perovskites using first-principles approach. The study commences with a meticulous assessment of both structural stability and thermodynamic properties employing various metrics. Energy minimization across different phases, utilizing the Birch-Murnaghan equation of state, confirms the ferromagnetic phase as energetically favoured, supported by Curie-Weiss constants of 98 K, 100 K, and 150 K for V, Mn, and Ni-based perovskites, respectively. Mechanical properties, including hardness, stiffness, ductility, and fracture strength, are derived from the simulated elastic constants, ensuring the mechanical stability of the materials. Electronic structure analysis, performed using the PBE-GGA and GGA + mBJ functionals, reveals that Cs₂AgMBr₆ compounds exhibit half-metallic ferromagnetism, with 100 % spin polarization at the Fermi level. Analysis of the partial density of states highlights the half-metallic ferromagnetic mechanism, confirming predominant ferromagnetic order through parameters such as the exchange splitting energy (Δ<sub>x</sub>), <em>p-d</em> exchange interaction energy (Δ<sub>x</sub>(<em>p-d</em>)), crystal-field energy (<em>E</em><sub>crys</sub>), and exchange constants (N₀α and N₀β). The negative values of the exchange constants further validated the dominant ferromagnetic order in both <em>s-d</em> and <em>p-d</em> interactions, with unpaired electrons contributing magnetic moments of 2 μ<sub>B</sub> for V, 4 μ<sub>B</sub> for Mn, and 1 μ<sub>B</sub> for Ni-based perovskites. Also, the Curie temperatures are calculated as 385 K, 747 K, and 204 K for V, Mn, and Ni-based perovskites. The overall findings, which reveal 100 % spin polarization and high zT values, underscore the significant potential of Cs₂AgMBr₆ halide perovskites for advancing spintronics and thermoelectric applications.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"186 \",\"pages\":\"Article 109023\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124009193\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009193","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Harnessing the half-metallicity and thermoelectric insights in Cs2AgMBr6 (M = V, Mn, Ni) double halide perovskites: A DFT study
Herein, we undertake a detailed exploration of the structural stability, magneto-electronic behavior, and thermoelectric properties of Cs₂AgMBr₆ (M = V, Mn, Ni) halide double perovskites using first-principles approach. The study commences with a meticulous assessment of both structural stability and thermodynamic properties employing various metrics. Energy minimization across different phases, utilizing the Birch-Murnaghan equation of state, confirms the ferromagnetic phase as energetically favoured, supported by Curie-Weiss constants of 98 K, 100 K, and 150 K for V, Mn, and Ni-based perovskites, respectively. Mechanical properties, including hardness, stiffness, ductility, and fracture strength, are derived from the simulated elastic constants, ensuring the mechanical stability of the materials. Electronic structure analysis, performed using the PBE-GGA and GGA + mBJ functionals, reveals that Cs₂AgMBr₆ compounds exhibit half-metallic ferromagnetism, with 100 % spin polarization at the Fermi level. Analysis of the partial density of states highlights the half-metallic ferromagnetic mechanism, confirming predominant ferromagnetic order through parameters such as the exchange splitting energy (Δx), p-d exchange interaction energy (Δx(p-d)), crystal-field energy (Ecrys), and exchange constants (N₀α and N₀β). The negative values of the exchange constants further validated the dominant ferromagnetic order in both s-d and p-d interactions, with unpaired electrons contributing magnetic moments of 2 μB for V, 4 μB for Mn, and 1 μB for Ni-based perovskites. Also, the Curie temperatures are calculated as 385 K, 747 K, and 204 K for V, Mn, and Ni-based perovskites. The overall findings, which reveal 100 % spin polarization and high zT values, underscore the significant potential of Cs₂AgMBr₆ halide perovskites for advancing spintronics and thermoelectric applications.
期刊介绍:
Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy.
Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications.
Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.