通过 N 和 B 共掺增强硅/石墨烯异质结构对锂的吸附和扩散特性:密度泛函理论的启示

IF 4.2 3区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Hai-lin Ren , Yang Su , Shuai Zhao , Cheng-wei Li , Xiao-min Wang , Bo-han Li
{"title":"通过 N 和 B 共掺增强硅/石墨烯异质结构对锂的吸附和扩散特性:密度泛函理论的启示","authors":"Hai-lin Ren ,&nbsp;Yang Su ,&nbsp;Shuai Zhao ,&nbsp;Cheng-wei Li ,&nbsp;Xiao-min Wang ,&nbsp;Bo-han Li","doi":"10.1016/j.mssp.2024.109041","DOIUrl":null,"url":null,"abstract":"<div><div>Due to the structural properties of silicene itself, a substrate material is required to support it in practical use. Graphene is considered to be a good substrate material because of its many excellent properties. However, the heterostructure (Si/G) composed of graphene and silicene is low in stability, and it needs to be improved to enhance its stability. In this work, N and B co-doped graphene and silicene heterostructures (SiB/GN) are constructed with the aim of improving structural stability and obtaining better properties. Calculations show that the SiB/GN heterostructure still belongs to the vdW heterostructure. B doping can disrupt the topologically protected surface quantum states of graphene and silicene, and N doping can further increase the Coulombic attraction between graphene and silicene, thus increasing the binding energy to 22.58 meV Å<sup>−1</sup>, nearly twice that of Si/G. The density of states results show that the SiB/GN heterostructure is metallic before and after lithium embedding, which ensures good electrical conductivity. Due to the synergistic effect SiB/GN heterostructure exhibits stronger Li adsorption performance (2.36 eV), and lower diffusion barrier (0.229 eV), which is conducive to the inhibition of lithium dendrite formation and the improvement of the battery multiplicity charge/discharge performance.</div></div>","PeriodicalId":18240,"journal":{"name":"Materials Science in Semiconductor Processing","volume":"186 ","pages":"Article 109041"},"PeriodicalIF":4.2000,"publicationDate":"2024-10-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"N and B co-doping to enhance Li adsorption and diffusion properties on silicene/graphene heterostructures: Insights from density functional theory\",\"authors\":\"Hai-lin Ren ,&nbsp;Yang Su ,&nbsp;Shuai Zhao ,&nbsp;Cheng-wei Li ,&nbsp;Xiao-min Wang ,&nbsp;Bo-han Li\",\"doi\":\"10.1016/j.mssp.2024.109041\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Due to the structural properties of silicene itself, a substrate material is required to support it in practical use. Graphene is considered to be a good substrate material because of its many excellent properties. However, the heterostructure (Si/G) composed of graphene and silicene is low in stability, and it needs to be improved to enhance its stability. In this work, N and B co-doped graphene and silicene heterostructures (SiB/GN) are constructed with the aim of improving structural stability and obtaining better properties. Calculations show that the SiB/GN heterostructure still belongs to the vdW heterostructure. B doping can disrupt the topologically protected surface quantum states of graphene and silicene, and N doping can further increase the Coulombic attraction between graphene and silicene, thus increasing the binding energy to 22.58 meV Å<sup>−1</sup>, nearly twice that of Si/G. The density of states results show that the SiB/GN heterostructure is metallic before and after lithium embedding, which ensures good electrical conductivity. Due to the synergistic effect SiB/GN heterostructure exhibits stronger Li adsorption performance (2.36 eV), and lower diffusion barrier (0.229 eV), which is conducive to the inhibition of lithium dendrite formation and the improvement of the battery multiplicity charge/discharge performance.</div></div>\",\"PeriodicalId\":18240,\"journal\":{\"name\":\"Materials Science in Semiconductor Processing\",\"volume\":\"186 \",\"pages\":\"Article 109041\"},\"PeriodicalIF\":4.2000,\"publicationDate\":\"2024-10-29\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Materials Science in Semiconductor Processing\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S1369800124009375\",\"RegionNum\":3,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science in Semiconductor Processing","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1369800124009375","RegionNum":3,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

由于硅烯本身的结构特性,在实际应用中需要一种基底材料来支持它。石墨烯因其多种优异特性而被认为是一种很好的基底材料。然而,由石墨烯和硅烯组成的异质结构(Si/G)稳定性较低,需要加以改进以提高其稳定性。本研究构建了 N 和 B 共掺杂的石墨烯和硅烯异质结构(SiB/GN),旨在提高结构的稳定性并获得更好的性能。计算表明,SiB/GN 异质结构仍属于 vdW 异质结构。B 掺杂会破坏石墨烯和硅烯的拓扑保护表面量子态,N 掺杂会进一步增加石墨烯和硅烯之间的库仑吸引力,从而使结合能增加到 22.58 meV Å-1,几乎是 Si/G 的两倍。态密度结果表明,SiB/GN 异质结构在锂嵌入前后都具有金属特性,从而确保了良好的导电性。由于协同效应,SiB/GN 异质结构表现出更强的锂吸附性能(2.36 eV)和更低的扩散阻抗(0.229 eV),这有利于抑制锂枝晶的形成和提高电池的倍率充放电性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
N and B co-doping to enhance Li adsorption and diffusion properties on silicene/graphene heterostructures: Insights from density functional theory
Due to the structural properties of silicene itself, a substrate material is required to support it in practical use. Graphene is considered to be a good substrate material because of its many excellent properties. However, the heterostructure (Si/G) composed of graphene and silicene is low in stability, and it needs to be improved to enhance its stability. In this work, N and B co-doped graphene and silicene heterostructures (SiB/GN) are constructed with the aim of improving structural stability and obtaining better properties. Calculations show that the SiB/GN heterostructure still belongs to the vdW heterostructure. B doping can disrupt the topologically protected surface quantum states of graphene and silicene, and N doping can further increase the Coulombic attraction between graphene and silicene, thus increasing the binding energy to 22.58 meV Å−1, nearly twice that of Si/G. The density of states results show that the SiB/GN heterostructure is metallic before and after lithium embedding, which ensures good electrical conductivity. Due to the synergistic effect SiB/GN heterostructure exhibits stronger Li adsorption performance (2.36 eV), and lower diffusion barrier (0.229 eV), which is conducive to the inhibition of lithium dendrite formation and the improvement of the battery multiplicity charge/discharge performance.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
Materials Science in Semiconductor Processing
Materials Science in Semiconductor Processing 工程技术-材料科学:综合
CiteScore
8.00
自引率
4.90%
发文量
780
审稿时长
42 days
期刊介绍: Materials Science in Semiconductor Processing provides a unique forum for the discussion of novel processing, applications and theoretical studies of functional materials and devices for (opto)electronics, sensors, detectors, biotechnology and green energy. Each issue will aim to provide a snapshot of current insights, new achievements, breakthroughs and future trends in such diverse fields as microelectronics, energy conversion and storage, communications, biotechnology, (photo)catalysis, nano- and thin-film technology, hybrid and composite materials, chemical processing, vapor-phase deposition, device fabrication, and modelling, which are the backbone of advanced semiconductor processing and applications. Coverage will include: advanced lithography for submicron devices; etching and related topics; ion implantation; damage evolution and related issues; plasma and thermal CVD; rapid thermal processing; advanced metallization and interconnect schemes; thin dielectric layers, oxidation; sol-gel processing; chemical bath and (electro)chemical deposition; compound semiconductor processing; new non-oxide materials and their applications; (macro)molecular and hybrid materials; molecular dynamics, ab-initio methods, Monte Carlo, etc.; new materials and processes for discrete and integrated circuits; magnetic materials and spintronics; heterostructures and quantum devices; engineering of the electrical and optical properties of semiconductors; crystal growth mechanisms; reliability, defect density, intrinsic impurities and defects.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信