通过高温 I-V 循环提高 TiN/AlOx/Pt RRAM 的电阻开关性能

IF 1.4 4区物理与天体物理 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Solid-state Electronics Pub Date : 2024-10-15 DOI:10.1016/j.sse.2024.109011

{"title":"通过高温 I-V 循环提高 TiN/AlOx/Pt RRAM 的电阻开关性能","authors":"","doi":"10.1016/j.sse.2024.109011","DOIUrl":null,"url":null,"abstract":"<div><div>Set voltage is a key parameter for the application of Resistance Random Access Memory (RRAM). In this paper, based on TiN/AlO<em><sub>x</sub></em>/Pt RRAM synthesized by the magnetron sputtering method, we have studied the influence of <em>I</em>-<em>V</em> cycling at high temperatures on resistive switching performance. The results show that the treatment can significantly reduce the set voltage in resistive switching cycles. Moreover, the treatment can also enhance endurance effectively. Further studies indicated that a higher compliance current in treatment can induce a smaller and more uniform set voltage. We ascribe the improvements in resistive switching performance to the generation and accumulation of oxygen vacancies in the treatment. This research provides new ideas for synthesizing RRAM devices with low power consumption.</div></div>","PeriodicalId":21909,"journal":{"name":"Solid-state Electronics","volume":null,"pages":null},"PeriodicalIF":1.4000,"publicationDate":"2024-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced resistive switching performance in TiN/AlOx/Pt RRAM by high-temperature I-V cycling\",\"authors\":\"\",\"doi\":\"10.1016/j.sse.2024.109011\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>Set voltage is a key parameter for the application of Resistance Random Access Memory (RRAM). In this paper, based on TiN/AlO<em><sub>x</sub></em>/Pt RRAM synthesized by the magnetron sputtering method, we have studied the influence of <em>I</em>-<em>V</em> cycling at high temperatures on resistive switching performance. The results show that the treatment can significantly reduce the set voltage in resistive switching cycles. Moreover, the treatment can also enhance endurance effectively. Further studies indicated that a higher compliance current in treatment can induce a smaller and more uniform set voltage. We ascribe the improvements in resistive switching performance to the generation and accumulation of oxygen vacancies in the treatment. This research provides new ideas for synthesizing RRAM devices with low power consumption.</div></div>\",\"PeriodicalId\":21909,\"journal\":{\"name\":\"Solid-state Electronics\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.4000,\"publicationDate\":\"2024-10-15\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Solid-state Electronics\",\"FirstCategoryId\":\"101\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0038110124001606\",\"RegionNum\":4,\"RegionCategory\":\"物理与天体物理\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Solid-state Electronics","FirstCategoryId":"101","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0038110124001606","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

设定电压是电阻随机存取存储器（RRAM）应用的一个关键参数。本文以磁控溅射法合成的 TiN/AlOx/Pt RRAM 为基础，研究了高温下 I-V 循环对电阻开关性能的影响。结果表明，这种处理方法可以显著降低电阻开关循环中的设定电压。此外，这种处理方法还能有效提高耐久性。进一步的研究表明，处理过程中的顺应电流越大，设定电压就越小、越均匀。我们将电阻开关性能的改善归因于处理过程中氧空位的产生和积累。这项研究为合成低功耗 RRAM 器件提供了新思路。

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Enhanced resistive switching performance in TiN/AlOx/Pt RRAM by high-temperature I-V cycling

Set voltage is a key parameter for the application of Resistance Random Access Memory (RRAM). In this paper, based on TiN/AlO_x/Pt RRAM synthesized by the magnetron sputtering method, we have studied the influence of I-V cycling at high temperatures on resistive switching performance. The results show that the treatment can significantly reduce the set voltage in resistive switching cycles. Moreover, the treatment can also enhance endurance effectively. Further studies indicated that a higher compliance current in treatment can induce a smaller and more uniform set voltage. We ascribe the improvements in resistive switching performance to the generation and accumulation of oxygen vacancies in the treatment. This research provides new ideas for synthesizing RRAM devices with low power consumption.

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来源期刊

Solid-state Electronics 物理-工程：电子与电气

CiteScore

3.00

自引率

5.90%

发文量

212

审稿时长

3 months

期刊介绍： It is the aim of this journal to bring together in one publication outstanding papers reporting new and original work in the following areas: (1) applications of solid-state physics and technology to electronics and optoelectronics, including theory and device design; (2) optical, electrical, morphological characterization techniques and parameter extraction of devices; (3) fabrication of semiconductor devices, and also device-related materials growth, measurement and evaluation; (4) the physics and modeling of submicron and nanoscale microelectronic and optoelectronic devices, including processing, measurement, and performance evaluation; (5) applications of numerical methods to the modeling and simulation of solid-state devices and processes; and (6) nanoscale electronic and optoelectronic devices, photovoltaics, sensors, and MEMS based on semiconductor and alternative electronic materials; (7) synthesis and electrooptical properties of materials for novel devices.