{"title":"IGBT 封装模块的多物理场耦合建模及不同结构失效相互作用效应研究","authors":"","doi":"10.1016/j.microrel.2024.115527","DOIUrl":null,"url":null,"abstract":"<div><div>As the key package structure of insulated gate bipolar transistor (IGBT), the bond wire and solder layer are susceptible to failure due to alternating thermal stress, which can seriously change the operating characteristics of the package structure. In this paper, an electrical-thermal-mechanical multi-physical field coupling simulation model of IGBT including the fine bond wire and solder layer structure is constructed, whose equivalence and accuracy are verified by experiments and characteristic curves. Based on the constructed healthy model, the simulation results find that the fourth bond wire at the center location shows the highest temperature of 38.7 °C and the maximum mechanical stress of 55.5 MPa. Subsequently, the researches on single-structure failure and dual-structure simultaneous failure are carried out. The results show that bond wire failure only significantly affects its own operating characteristics, while solder layer failure affects itself and bond wire simultaneously. Moreover, the temperature rise due to the bond wire failure is more significant with an 86.8 % increase, while the mechanical stress change due to the solder layer failure is larger with a 178.2 % increase. The research in this paper can guide the reliability improvement of IGBT and the optimization of IGBT package structure.</div></div>","PeriodicalId":51131,"journal":{"name":"Microelectronics Reliability","volume":null,"pages":null},"PeriodicalIF":1.6000,"publicationDate":"2024-10-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Research on the multi-physical field coupling modelling of IGBT package module and the effect of different structure failure interaction\",\"authors\":\"\",\"doi\":\"10.1016/j.microrel.2024.115527\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<div><div>As the key package structure of insulated gate bipolar transistor (IGBT), the bond wire and solder layer are susceptible to failure due to alternating thermal stress, which can seriously change the operating characteristics of the package structure. In this paper, an electrical-thermal-mechanical multi-physical field coupling simulation model of IGBT including the fine bond wire and solder layer structure is constructed, whose equivalence and accuracy are verified by experiments and characteristic curves. Based on the constructed healthy model, the simulation results find that the fourth bond wire at the center location shows the highest temperature of 38.7 °C and the maximum mechanical stress of 55.5 MPa. Subsequently, the researches on single-structure failure and dual-structure simultaneous failure are carried out. The results show that bond wire failure only significantly affects its own operating characteristics, while solder layer failure affects itself and bond wire simultaneously. Moreover, the temperature rise due to the bond wire failure is more significant with an 86.8 % increase, while the mechanical stress change due to the solder layer failure is larger with a 178.2 % increase. The research in this paper can guide the reliability improvement of IGBT and the optimization of IGBT package structure.</div></div>\",\"PeriodicalId\":51131,\"journal\":{\"name\":\"Microelectronics Reliability\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":1.6000,\"publicationDate\":\"2024-10-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Microelectronics Reliability\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://www.sciencedirect.com/science/article/pii/S0026271424002075\",\"RegionNum\":4,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Microelectronics Reliability","FirstCategoryId":"5","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0026271424002075","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Research on the multi-physical field coupling modelling of IGBT package module and the effect of different structure failure interaction
As the key package structure of insulated gate bipolar transistor (IGBT), the bond wire and solder layer are susceptible to failure due to alternating thermal stress, which can seriously change the operating characteristics of the package structure. In this paper, an electrical-thermal-mechanical multi-physical field coupling simulation model of IGBT including the fine bond wire and solder layer structure is constructed, whose equivalence and accuracy are verified by experiments and characteristic curves. Based on the constructed healthy model, the simulation results find that the fourth bond wire at the center location shows the highest temperature of 38.7 °C and the maximum mechanical stress of 55.5 MPa. Subsequently, the researches on single-structure failure and dual-structure simultaneous failure are carried out. The results show that bond wire failure only significantly affects its own operating characteristics, while solder layer failure affects itself and bond wire simultaneously. Moreover, the temperature rise due to the bond wire failure is more significant with an 86.8 % increase, while the mechanical stress change due to the solder layer failure is larger with a 178.2 % increase. The research in this paper can guide the reliability improvement of IGBT and the optimization of IGBT package structure.
期刊介绍:
Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged.
Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.