不同振动方向对 IGBT 模块焊接层疲劳的影响

IF 1.6 4区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

Microelectronics Reliability Pub Date : 2024-10-22 DOI:10.1016/j.microrel.2024.115526

Yifan Jian, Shinian Peng, Zhi Chen, Zhengxi He, Liang He, Xinzhi Lv

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引用次数: 0

摘要

绝缘栅双极晶体管 (IGBT) 模块广泛应用于高速列车、船舶和电动汽车。与电力系统中使用的 IGBT 模块相比，这些应用中的 IGBT 模块更容易受到振动对其可靠性的影响。本文提出了 IGBT 模块的多物理场仿真方法和寿命模型，以评估不同振动方向对焊接层疲劳的影响。首先，开发了一个 IGBT 模块的多物理场模型，其中包含电气、热、机械和振动耦合。该多物理场仿真模型的有效性通过实验平台进行了验证。随后，分析了不同振动方向对 IGBT 模块焊接层疲劳的影响，并通过仿真提出了 IGBT 的寿命模型。最后，建立了一个具有振动环境的功率循环实验平台，以验证振动对 IGBT 模块焊层疲劳的影响。仿真和实验结果表明，垂直振动加速了 IGBT 模块的焊料层疲劳，在 30 Hz 垂直振动下工作的 IGBT 模块的寿命比仅在功率循环下工作的 IGBT 模块短约 15%。焊料层失效的计算结果与实验结果之间的误差为 5%。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Influence of different vibration directions on the solder layer fatigue in IGBT modules

Insulated-gate bipolar transistor (IGBT) modules are extensively utilized in high-speed trains, ships, and electric vehicles. Compared to those used in power systems, IGBT modules in these applications are more susceptible to vibration effects on their reliability. This paper proposes a multi-physics field simulation method and a lifetime model for IGBT modules to assess the impact of different vibration directions on solder layer fatigue. Initially, a multi-physics field model of the IGBT module is developed, incorporating electrical, thermal, mechanical, and vibration coupling. The effectiveness of this multi-physics simulation model is verified by an experimental platform. Subsequently, the influence of different vibration directions on solder layer fatigue in the IGBT module is analysed, and a life model of the IGBT is proposed through simulation. Finally, a power cycling with a vibration environment experimental platform is established to validate the effect of vibration on solder layer fatigue in the IGBT module. The simulation and experimental results indicate that vertical vibration accelerates the solder layer fatigue of IGBT modules, and the lifetime of an IGBT module operating under vertical vibration at 30 Hz is about 15 % shorter than that of an IGBT module operating under power cycling alone. The error between the calculated results of the solder layer failure and the experimental result is <5 %.

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来源期刊

Microelectronics Reliability 工程技术-工程：电子与电气

CiteScore

3.30

自引率

12.50%

发文量

342

审稿时长

68 days

期刊介绍： Microelectronics Reliability, is dedicated to disseminating the latest research results and related information on the reliability of microelectronic devices, circuits and systems, from materials, process and manufacturing, to design, testing and operation. The coverage of the journal includes the following topics: measurement, understanding and analysis; evaluation and prediction; modelling and simulation; methodologies and mitigation. Papers which combine reliability with other important areas of microelectronics engineering, such as design, fabrication, integration, testing, and field operation will also be welcome, and practical papers reporting case studies in the field and specific application domains are particularly encouraged. Most accepted papers will be published as Research Papers, describing significant advances and completed work. Papers reviewing important developing topics of general interest may be accepted for publication as Review Papers. Urgent communications of a more preliminary nature and short reports on completed practical work of current interest may be considered for publication as Research Notes. All contributions are subject to peer review by leading experts in the field.