具有高增益的石墨烯/硅绝缘体上异质级联放大器

IF 4.1 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Electron Device Letters Pub Date : 2024-09-23 DOI:10.1109/LED.2024.3464647

Tian Tian;Jinshu Zhang;Kai Xiao;Yingxin Chen;Yuxuan Zhu;Peng Zhou;Wenzhong Bao;Junhao Chu;Jing Wan

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引用次数: 0

摘要

虽然石墨烯场效应晶体管（GFET）具有很高的载流子迁移率和跨导性能，但其输出阻抗较低，导致电压和功率增益有限。本研究开发了一种异质工艺，将单层石墨烯与绝缘体上硅（SOI）衬底集成在一起，从而实现了突破性的高增益级联放大器。通过结合 GFET 的高跨导和 SOI-FET 的高输出阻抗的优势，异质级联放大器显示出高输出阻抗和高电压增益。此外，异质级联放大器在跨导（SOI-FET 的 12.6 倍）和输出电阻（GFET 的 98.7 倍）方面也有显著改善。通过优化偏置条件，可获得高达 80 的最大增益，大大超过了独立的 GFET 和 SOI-FET 器件。这种石墨烯/SOI 异质级联放大器在射频晶体管技术和无线通信领域有着广阔的应用前景。

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Graphene/Silicon-on-Insulator Heterogenous Cascode Amplifier With High Gain

Although graphene field-effect transistors (GFET) exhibit high carrier mobility and transconductance, they suffer from low output resistance, resulting in limited voltage and power gain. In this study, a heterogenous process is developed to integrate single-layer graphene with silicon-on-insulator (SOI) substrate, then achieving a groundbreaking high-gain cascode amplifier. By combining the advantages of high transconductance from GFET and high output resistance from SOI-FET, the heterogenous cascode amplifier shows high output resistance and high voltage gain. Moreover, the heterogenous cascode amplifier demonstrates a significant improvement in transconductance (12.6 times of SOI-FET) and output resistance (98.7 times of GFET). A maximum gain of up to 80 is obtained by optimizing the bias conditions, vastly exceeding that of standalone GFET and SOI-FET devices. This graphene/SOI heterogenous cascode amplifier exhibits promising applications in radio-frequency transistor technology and wireless communication.

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来源期刊

IEEE Electron Device Letters 工程技术-工程：电子与电气

CiteScore

8.20

自引率

10.20%

发文量

551

审稿时长

1.4 months

期刊介绍： IEEE Electron Device Letters publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors.