优化 IGZO/TiOx 双层薄膜光电晶体管的制造工艺以改善电气和光响应特性

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-09-25 DOI:10.1109/TED.2024.3462379

Jae-Yun Lee;Gergely Tarsoly;Sang-Bong Lee;Jin-Hee Lee;Sung-Jin Kim

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引用次数: 0

摘要

金属氧化物具有高电荷载流子迁移率、透明度和多功能性，是电子材料领域最热门的研究目标之一。最近，基于多层氧化物薄膜的半导体在电阻存储器或光电晶体管等应用领域引起了人们的兴趣。在此，我们基于通过溅射形成的双层铟镓锌氧化物（IGZO）和非chiometric、缺氧氧化钛（TiOx）薄膜，制造了一种光电晶体管。通过改变热退火步骤的温度来优化器件的制造，从而提高电性能和光响应特性。基于 IGZO/TiOx 双层薄膜的器件在 350 ℃ 退火时表现出最佳性能，具有良好的迁移率、较低的阈下摆动、0 V 左右的导通电压以及在较宽的栅极偏压范围内较高的光响应。在离散光脉冲下对动态光响应进行了评估。器件在恒温箱中存放五个多月后，对其特性进行了测量，观察到光响应具有合理的稳定性。

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Optimization of the Fabrication Process for Phototransistors With IGZO/TiOx Bilayer Thin Films to Improve Electrical and Photoresponse Characteristics

Metal oxides are among the most popular research targets in electronic materials for their high charge carrier mobility, transparency, and versatility. Recently, semiconductors based on multilayers of oxide thin films have attracted interest for applications, such as resistive memories or phototransistors. Here, a phototransistor was fabricated based on a bilayer of indium gallium zinc oxide (IGZO) and nonstochiometric, oxygen-deficient titanium oxide (TiOx) thin films formed via sputtering. The device fabrication was optimized by varying the temperature of the thermal annealing step to enhance the electrical performance and photoresponse characteristics. The IGZO/TiOx bilayer-based devices exhibited maximal performance when annealed at 350 °C with good mobility, low subthreshold swing, a turn-on voltage around 0 V, and high photoresponse through a wide range of gate bias. The dynamic photoresponse was evaluated under discrete light pulses. The device characteristics were measured after storage in an exicator for more than five months, and reasonable stability in photoresponse was observed.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.