在低温条件下增强 FDSOI 铁电场效应晶体管的耐久性和稳定性，实现先进的内存应用

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-09-24 DOI:10.1109/TED.2024.3456763

Miaomiao Zhang;Haoji Qian;Jiacheng Xu;Minglei Ma;Rongzong Shen;Gaobo Lin;Jiani Gu;Yan Liu;Chengji Jin;Jiajia Chen;Genquan Han

{"title":"在低温条件下增强 FDSOI 铁电场效应晶体管的耐久性和稳定性，实现先进的内存应用","authors":"Miaomiao Zhang;Haoji Qian;Jiacheng Xu;Minglei Ma;Rongzong Shen;Gaobo Lin;Jiani Gu;Yan Liu;Chengji Jin;Jiajia Chen;Genquan Han","doi":"10.1109/TED.2024.3456763","DOIUrl":null,"url":null,"abstract":"In this work, we have systematically characterized the ferroelectric (FE) and memory properties in the fully depleted silicon-on-insulator (FDSOI) FE field-effect transistor (FeFET) across a temperature range of 300–5 K. At a deep cryogenic temperature of 5 K, the endurance of multipolarization states in Hf0.5Zr0.5O2 (HZO) gate-stack exhibits a significant improvement compared to that at 300 K. Especially for states of partial switching polarization under low voltage, it is expected to achieve endurance immunity. This can be attributed to that oxygen vacancies are more difficult to redistribute at cryogenic temperature. Furthermore, compared to 300 K, the performance of multilevel cell FDSOI FeFET at 5 K demonstrates higher stability, providing a promising solution for cryogenic memory and computing systems with low power and high stability.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6680-6685"},"PeriodicalIF":2.9000,"publicationDate":"2024-09-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications\",\"authors\":\"Miaomiao Zhang;Haoji Qian;Jiacheng Xu;Minglei Ma;Rongzong Shen;Gaobo Lin;Jiani Gu;Yan Liu;Chengji Jin;Jiajia Chen;Genquan Han\",\"doi\":\"10.1109/TED.2024.3456763\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work, we have systematically characterized the ferroelectric (FE) and memory properties in the fully depleted silicon-on-insulator (FDSOI) FE field-effect transistor (FeFET) across a temperature range of 300–5 K. At a deep cryogenic temperature of 5 K, the endurance of multipolarization states in Hf0.5Zr0.5O2 (HZO) gate-stack exhibits a significant improvement compared to that at 300 K. Especially for states of partial switching polarization under low voltage, it is expected to achieve endurance immunity. This can be attributed to that oxygen vacancies are more difficult to redistribute at cryogenic temperature. Furthermore, compared to 300 K, the performance of multilevel cell FDSOI FeFET at 5 K demonstrates higher stability, providing a promising solution for cryogenic memory and computing systems with low power and high stability.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"71 11\",\"pages\":\"6680-6685\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-24\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10691925/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10691925/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}

引用次数: 0

摘要

在这项工作中，我们系统地描述了全耗尽型硅绝缘体（FDSOI）铁电场效应晶体管（FeFET）在 300-5 K 温度范围内的铁电（FE）和存储器特性。在 5 K 的深冷温度下，Hf0.5Zr0.5O2（HZO）栅极堆栈的多极化状态的耐久性比 300 K 时有显著改善。这可能是因为氧空位在低温下更难重新分布。此外，与 300 K 相比，多级单元 FDSOI FeFET 在 5 K 下的性能表现出更高的稳定性，为低功耗、高稳定性的低温存储器和计算系统提供了一种前景广阔的解决方案。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Enhanced Endurance and Stability of FDSOI Ferroelectric FETs at Cryogenic Temperatures for Advanced Memory Applications

In this work, we have systematically characterized the ferroelectric (FE) and memory properties in the fully depleted silicon-on-insulator (FDSOI) FE field-effect transistor (FeFET) across a temperature range of 300–5 K. At a deep cryogenic temperature of 5 K, the endurance of multipolarization states in Hf0.5Zr0.5O2 (HZO) gate-stack exhibits a significant improvement compared to that at 300 K. Especially for states of partial switching polarization under low voltage, it is expected to achieve endurance immunity. This can be attributed to that oxygen vacancies are more difficult to redistribute at cryogenic temperature. Furthermore, compared to 300 K, the performance of multilevel cell FDSOI FeFET at 5 K demonstrates higher stability, providing a promising solution for cryogenic memory and computing systems with low power and high stability.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.