具有不对称 MXene 电极的自驱动型 β-Ga2O3 太阳盲深紫色光电探测器

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Chao Xie;Xisheng Cui;Shijie Xu;Yu Cheng;Liangpan Yang;Wenhua Yang;Zhixiang Huang
{"title":"具有不对称 MXene 电极的自驱动型 β-Ga2O3 太阳盲深紫色光电探测器","authors":"Chao Xie;Xisheng Cui;Shijie Xu;Yu Cheng;Liangpan Yang;Wenhua Yang;Zhixiang Huang","doi":"10.1109/TED.2024.3454590","DOIUrl":null,"url":null,"abstract":"Here, a \n<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>\n-Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a \n<inline-formula> <tex-math>$\\beta $ </tex-math></inline-formula>\n-Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large Ilight/\n<inline-formula> <tex-math>${I} _{\\text {dark}}$ </tex-math></inline-formula>\n ratio of \n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\n, a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of \n<inline-formula> <tex-math>$10^{{11}}$ </tex-math></inline-formula>\n Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain \n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\n. A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"6804-6808"},"PeriodicalIF":2.9000,"publicationDate":"2024-09-25","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Self-Driven β-Ga2O3 Solar-Blind Deep-Ultraviolet Photodetectors With Asymmetric MXene Electrodes\",\"authors\":\"Chao Xie;Xisheng Cui;Shijie Xu;Yu Cheng;Liangpan Yang;Wenhua Yang;Zhixiang Huang\",\"doi\":\"10.1109/TED.2024.3454590\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Here, a \\n<inline-formula> <tex-math>$\\\\beta $ </tex-math></inline-formula>\\n-Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a \\n<inline-formula> <tex-math>$\\\\beta $ </tex-math></inline-formula>\\n-Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large Ilight/\\n<inline-formula> <tex-math>${I} _{\\\\text {dark}}$ </tex-math></inline-formula>\\n ratio of \\n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\\n, a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of \\n<inline-formula> <tex-math>$10^{{11}}$ </tex-math></inline-formula>\\n Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain \\n<inline-formula> <tex-math>$10^{{3}}$ </tex-math></inline-formula>\\n. A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"71 11\",\"pages\":\"6804-6808\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-09-25\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10693946/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10693946/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
引用次数: 0

摘要

在这里,我们设计了一种在自驱动模式下工作的$\beta $ -Ga2O3太阳盲深紫色(DUV)光电探测器。在 $\beta $ -Ga2O3 微薄片的两端滴涂了通过不同掺杂实现不同功函数的 MXene 薄膜,作为不对称电极。不同的功函数带来了强大的内置电场,产生了明显的光伏(PV)效应。因此,该光检测器的 Ilight/ ${I} _{text {dark}}$ 比值高达 10^{{3}}$,暗电流低至亚毫安,响应灵敏度高达 9.81 mA/W,比检测灵敏度高达 10^{{11}}$ Jones,响应速度快至 10.2/17.7 ms,并且在零偏压条件下,254 nm 光具有良好的工作稳定性。紫外/紫外抑制比可达 10^{{3}}$ 。柔性器件还能在各种弯曲状态下保持稳定的耐用性。这项研究为构建高效的紫外光探测器提供了一条可行的途径,同时也有助于开发基于 MXene 的光电器件。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Self-Driven β-Ga2O3 Solar-Blind Deep-Ultraviolet Photodetectors With Asymmetric MXene Electrodes
Here, a $\beta $ -Ga2O3 solar-blind deep-ultraviolet (DUV) photodetector operating in self-driven mode is designed. MXene films with diverse work functions enabled by different doping are drop-coated at opposite ends of a $\beta $ -Ga2O3 microflake to serve as asymmetric electrodes. The different work functions bring about a strong built-in electric field, rendering a pronounced photovoltaic (PV) effect. As a consequence, the light detector reaches a large Ilight/ ${I} _{\text {dark}}$ ratio of $10^{{3}}$ , a low dark current of sub-pA, a decent responsivity of 9.81 mA/W, a respectable specific detectivity of $10^{{11}}$ Jones, and a fast response speed of 10.2/17.7 ms, along with good operational stability, at zero bias, upon 254 nm light. The DUV/ultraviolet rejection ratio can attain $10^{{3}}$ . A flexible device also holds robust durability at various bending states. The study provides a viable route for constructing efficient DUV light detectors and is also helpful for developing MXene-based optoelectronic devices.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信