用于监测 EUV 光刻系统图案的纳米级分辨率线偏移探测器阵列 (LODAs)

IF 2.9 2区 工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC
Wei Chang;Burn Jeng Lin;Pin-Jiun Wu;Jiaw-Ren Shih;Yue-Der Chih;Jonathan Chang;Chrong Jung Lin;Ya-Chin King
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引用次数: 0

摘要

首次展示了一种新颖的线偏移探测器阵列(LODA),它可以分辨用于先进集成电路(IC)工艺的极紫外(EUV)扫描仪中的投影图案。设计独特的线偏移阵列可以真实地重建投影面上的精细布局图案。晶圆上无需电池的探测器阵列具有纳米级空间分辨率,可通过晶圆级测试离线读出。LODA 为纳米级图案监测提供了一个新方向,有助于保持 5 纳米以上 CMOS 节点的 EUV 光刻系统的稳定性。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Nano-Meter Resolution Line-Offset Detector Arrays (LODAs) for Pattern Monitoring in EUV Lithography System
A novel line-offset detector array (LODA) is demonstrated for the first time, which can resolve projected patterns in extreme ultraviolet (EUV) scanners for advanced integrated circuit (IC) processes. Fine layout patterns on the projected plane can be truthfully reconstructed by the uniquely designed line-offset array. With nano-meter spatial resolution, the on-wafer battery-less detector array can be read out offline through wafer-level tests. The LODA provides a new direction of nano-meter pattern monitoring that helps maintain stability in EUV lithography systems for CMOS nodes beyond 5 nm.
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来源期刊
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices 工程技术-工程:电子与电气
CiteScore
5.80
自引率
16.10%
发文量
937
审稿时长
3.8 months
期刊介绍: IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.
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