传输线脉冲应力下芯片级硅基 MOSFET 中点状缺陷的演变

IF 2.9 2区工程技术 Q2 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Transactions on Electron Devices Pub Date : 2024-10-07 DOI:10.1109/TED.2024.3466840

Xinyuan Zheng;Huiying Li;Yibo Ning;Chengbing Pan;Kai Wang;Lixia Zhao

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引用次数: 0

摘要

本研究对传输线脉冲（TLP）应力下芯片级硅基 MOSFET 的电气性能和点缺陷的演变进行了研究。实验结果表明，应力作用后，阈值电压降低了 9.8%，输出饱和电流增加了 5.9%。利用深电平瞬态光谱（DLTS）观察到硅基 MOSFET 芯片中存在一个能级为 0.25~pm ~0.05$ eV 的本征点缺陷，在应力作用后，该能级转移到了 0.37~pm ~0.05$ eV。阱能级的增加会减少硅/二氧化硅界面上的空穴，从而降低阈值电压。这项工作有助于进一步了解硅基 MOSFET 芯片中点缺陷的演变。

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Evolution of Point Defects in Chip-Level Silicon-Based MOSFET Under Transmission Line Pulse Stress

In this study, the electrical performance and evolution of point defects in chip-level Silicon-based MOSFET under transmission line pulse (TLP) stress were investigated. The experimental results show that the threshold voltage decreased by 9.8%, and the output saturation current increased by 5.9% after the stress. An intrinsic point defect with an energy level of

$0.25~\pm ~0.05$

eV in Si-based MOSFET chips was observed by using deep-level transient spectroscopy (DLTS), which shifted to

$0.37~\pm ~0.05$

eV after the stress. The increase of the trap energy level would reduce the holes at the Si/SiO2 interface, and herein the threshold voltage reduced. This work helps to further understand the evolution of point defects in Si-based MOSFET chips.

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来源期刊

IEEE Transactions on Electron Devices 工程技术-工程：电子与电气

CiteScore

5.80

自引率

16.10%

发文量

937

审稿时长

3.8 months

期刊介绍： IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.