{"title":"基于 45 纳米 RFSOI 技术的面积和能效量子隧道式热传感器","authors":"Shubham Patil;Abhishek Kadam;Jay Sonawane;Shreyas Deshmukh;R. Gaurav;Ajay Kumar Singh;Sandip Lashkare;Veeresh Deshpande;Laxmeesha Somappa;Udayan Ganguly","doi":"10.1109/TED.2024.3469177","DOIUrl":null,"url":null,"abstract":"The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing applications. It utilizes oscillation frequency as a metric for temperature sensing. The linearity in BTBT current with temperature can enable sensing with a simple readout mechanism. The initially designed circuit is simulated and analyzed in TCAD using mixed-mode simulation, followed by the fabrication of the proposed circuit using GF 45nm RFSOI technology. Measurements show the BTBT oscillator’s quasi-linear response as a function of temperature. Our proposed work enables the area (\n<inline-formula> <tex-math>$0.32~\\mu \\text { m}^{{2}}$ </tex-math></inline-formula>\n) and energy-efficient temperature sensor (2.5 fJ/cycle) for the energy and area-constraint edge applications.","PeriodicalId":13092,"journal":{"name":"IEEE Transactions on Electron Devices","volume":"71 11","pages":"7208-7212"},"PeriodicalIF":2.9000,"publicationDate":"2024-10-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology\",\"authors\":\"Shubham Patil;Abhishek Kadam;Jay Sonawane;Shreyas Deshmukh;R. Gaurav;Ajay Kumar Singh;Sandip Lashkare;Veeresh Deshpande;Laxmeesha Somappa;Udayan Ganguly\",\"doi\":\"10.1109/TED.2024.3469177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing applications. It utilizes oscillation frequency as a metric for temperature sensing. The linearity in BTBT current with temperature can enable sensing with a simple readout mechanism. The initially designed circuit is simulated and analyzed in TCAD using mixed-mode simulation, followed by the fabrication of the proposed circuit using GF 45nm RFSOI technology. Measurements show the BTBT oscillator’s quasi-linear response as a function of temperature. Our proposed work enables the area (\\n<inline-formula> <tex-math>$0.32~\\\\mu \\\\text { m}^{{2}}$ </tex-math></inline-formula>\\n) and energy-efficient temperature sensor (2.5 fJ/cycle) for the energy and area-constraint edge applications.\",\"PeriodicalId\":13092,\"journal\":{\"name\":\"IEEE Transactions on Electron Devices\",\"volume\":\"71 11\",\"pages\":\"7208-7212\"},\"PeriodicalIF\":2.9000,\"publicationDate\":\"2024-10-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"IEEE Transactions on Electron Devices\",\"FirstCategoryId\":\"5\",\"ListUrlMain\":\"https://ieeexplore.ieee.org/document/10713294/\",\"RegionNum\":2,\"RegionCategory\":\"工程技术\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"ENGINEERING, ELECTRICAL & ELECTRONIC\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE Transactions on Electron Devices","FirstCategoryId":"5","ListUrlMain":"https://ieeexplore.ieee.org/document/10713294/","RegionNum":2,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"ENGINEERING, ELECTRICAL & ELECTRONIC","Score":null,"Total":0}
Area and Energy-Efficient Quantum Tunneling-Based Thermal Sensor on 45nm RFSOI Technology
The compact and energy-efficient integrated temperature sensors are crucial for temperature monitoring and control. In this work, we propose a novel area and energy-efficient band-to-band tunneling (BTBT)-based oscillator for temperature sensing applications. It utilizes oscillation frequency as a metric for temperature sensing. The linearity in BTBT current with temperature can enable sensing with a simple readout mechanism. The initially designed circuit is simulated and analyzed in TCAD using mixed-mode simulation, followed by the fabrication of the proposed circuit using GF 45nm RFSOI technology. Measurements show the BTBT oscillator’s quasi-linear response as a function of temperature. Our proposed work enables the area (
$0.32~\mu \text { m}^{{2}}$
) and energy-efficient temperature sensor (2.5 fJ/cycle) for the energy and area-constraint edge applications.
期刊介绍:
IEEE Transactions on Electron Devices publishes original and significant contributions relating to the theory, modeling, design, performance and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanoelectronics, optoelectronics, photovoltaics, power ICs and micro-sensors. Tutorial and review papers on these subjects are also published and occasional special issues appear to present a collection of papers which treat particular areas in more depth and breadth.