用于高移动性 TFT 的氧化铟薄膜比较研究：ALD、PLD 和溶液工艺

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-10-27 DOI:10.1002/aelm.202400145

Min Guo, Jianting Wu, Hai Ou, Dongyu Xie, Qiaoji Zhu, Yi Huang, Mengye Wang, Lingyan Liang, Xiaoci Liang, Fengjuan Liu, Ce Ning, Xubing Lu, Hongtao Cao, Guangcai Yuan, Chuan Liu

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引用次数: 0

摘要

为高移动性薄膜晶体管（TFT）沉积氧化铟基膜是实现高分辨率和高频率显示背板的重要组成部分。本研究分别采用原子层沉积 (ALD)、脉冲激光沉积 (PLD) 和溶液工艺制备了三种用于 TFT 的 In2O3 (InO) 薄膜。ALD 衍生的 InO 薄膜显示出可控的晶粒形成，优化的 TFT 在传统晶体管测量和临界四探针测量中均显示出≈100 cm2 V-1s-1 的场效应迁移率，达到了低温多晶硅（LTPS）的水平。综合光谱研究表明，与 PLD 沉积和溶液处理 InO 薄膜相比，ALD 衍生 InO 薄膜具有表面形态更平滑、结晶度更好、原子生长模式更有序等优点。此外，ALD 衍生 TFT 的偏压稳定性可通过进一步钝化得到改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process

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Comparative Study of Indium Oxide Films for High-Mobility TFTs: ALD, PLD and Solution Process

Deposition of indium oxide base films for high-mobility thin film transistors (TFTs) has been an important part in the implementation of high-resolution and high-frequency display back panels. In this study, three types of In₂O₃ (InO) films have been fabricated for TFTs using atomic layer deposition (ALD), pulsed laser deposition (PLD), and solution process, respectively. ALD-derived InO films show controllable grain formation and optimized TFTs show the field effect mobility of ≈100 cm² V⁻¹s⁻¹ in both the conventional transistor measurements and critical four-probe measurements, reaching the level of low-temperature polycrystalline silicon (LTPS). Combined spectroscopy investigations show that the ALD-derived InO film features advantages as compared to those of the PLD-deposited and solution-processed InO film in providing a smoother surface morphology, good crystallinity, and more orderly atomic growth mode. Moreover, the bias-stress stability of ALD-derived TFTs can be improved with further passivation.

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来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.