铁磁神经形态设备中的线性权重更新突触响应

IF 5.3 2区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Junwei Zeng, Binxuan Zhao, Yakun Liu, Teng Xu, Wanjun Jiang, Liang Fang, Jiahao Liu
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引用次数: 0

摘要

具有反平行交换耦合的铁磁材料表现出自旋轨道转矩诱导的动力学,为实现人工突触等神经形态器件提供了一个新兴平台。然而,最先进的基于铁磁体的人工突触存在模拟开关线性差的问题,这成为在神经形态计算中实现高精度复杂任务的瓶颈。本文报告了一种在补偿铁磁横杆器件中具有高权重更新线性度的人工突触。特别是,通过对电流密度分布进行工程设计,增强了突触的线性权重更新。利用实验得出的器件参数,在三层全连接人工神经网络中实现了超过 95% 的手写数字识别准确率。这项研究提供了一种提高突触线性度的通用方法,也为自旋轨道器件在神经形态计算中的应用铺平了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
Linear Weight Update Synaptic Responses in Ferrimagnetic Neuromorphic Devices
Ferrimagnetic materials with antiparallel exchange coupling, exhibit spin-orbit-torque-induced dynamics, offering an emerging platform for realizing neuromorphic devices, such as artificial synapses. However, the state-of-the-art artificial synapses based on ferrimagnet suffer from poor analog switching linearity, which serves as a bottleneck for achieving complex tasks with high accuracy in neuromorphic computing. Here, an artificial synapse is reported with high-weight update linearity in a compensated ferrimagnetic crossbar device. In particular, the linear weight update of the synapses is enhanced by engineering the current density distribution. Using experimentally derived device parameters, handwritten digit recognition can be achieved with an accuracy of over 95% in a three-layer fully connected artificial neural network. The work provides a universal method to improve the synaptic linearity, which also paves the way for applying the spin-orbit device in neuromorphic computing.
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来源期刊
Advanced Electronic Materials
Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
11.00
自引率
3.20%
发文量
433
期刊介绍: Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.
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