全喷墨印刷 IGZO 晶体管综合指南

IF 5.3 2区材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY

Advanced Electronic Materials Pub Date : 2024-10-22 DOI:10.1002/aelm.202400478

Lorenzo Magnarin, Ben Breitung, Jasmin Aghassi-Hagmann

{"title":"全喷墨印刷 IGZO 晶体管综合指南","authors":"Lorenzo Magnarin, Ben Breitung, Jasmin Aghassi-Hagmann","doi":"10.1002/aelm.202400478","DOIUrl":null,"url":null,"abstract":"In this concise review, the recent advancements in fully inkjet-printed (IJP) indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) over the past years are discussed. IGZO has replaced hydrogenated amorphous silicon (a-Si:H) as the primary channel material for liquid-crystal display TFTs and has gained further attention due to the solution processability of IGZO inks. Despite the longstanding practice of printing IGZO for approximately fifteen years, the realization of fully inkjet-printed devices, including both dielectric and electrode components, represents a recent milestone in research, potentially heralding a cost-effective era for IGZO transistors. In this review, following an introductory exposition of IGZO, the focus is on the different ink formulations, currently deployed for solution-processed IGZO devices, the intricacies of the printing procedure involved are delineated, and ongoing research endeavors pertaining to the printing of dielectrics and electrodes for such devices are expounded upon.","PeriodicalId":110,"journal":{"name":"Advanced Electronic Materials","volume":"18 1","pages":""},"PeriodicalIF":5.3000,"publicationDate":"2024-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"A Comprehensive Guide to Fully Inkjet-Printed IGZO Transistors\",\"authors\":\"Lorenzo Magnarin, Ben Breitung, Jasmin Aghassi-Hagmann\",\"doi\":\"10.1002/aelm.202400478\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this concise review, the recent advancements in fully inkjet-printed (IJP) indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) over the past years are discussed. IGZO has replaced hydrogenated amorphous silicon (a-Si:H) as the primary channel material for liquid-crystal display TFTs and has gained further attention due to the solution processability of IGZO inks. Despite the longstanding practice of printing IGZO for approximately fifteen years, the realization of fully inkjet-printed devices, including both dielectric and electrode components, represents a recent milestone in research, potentially heralding a cost-effective era for IGZO transistors. In this review, following an introductory exposition of IGZO, the focus is on the different ink formulations, currently deployed for solution-processed IGZO devices, the intricacies of the printing procedure involved are delineated, and ongoing research endeavors pertaining to the printing of dielectrics and electrodes for such devices are expounded upon.\",\"PeriodicalId\":110,\"journal\":{\"name\":\"Advanced Electronic Materials\",\"volume\":\"18 1\",\"pages\":\"\"},\"PeriodicalIF\":5.3000,\"publicationDate\":\"2024-10-22\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Advanced Electronic Materials\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://doi.org/10.1002/aelm.202400478\",\"RegionNum\":2,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q2\",\"JCRName\":\"MATERIALS SCIENCE, MULTIDISCIPLINARY\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Electronic Materials","FirstCategoryId":"88","ListUrlMain":"https://doi.org/10.1002/aelm.202400478","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}

引用次数: 0

摘要

在这篇简明综述中，讨论了过去几年来全喷墨打印 (IJP) 铟镓锌氧化物 (IGZO) 薄膜晶体管 (TFT) 的最新进展。IGZO 已取代氢化非晶硅 (a-Si:H) 成为液晶显示器 TFT 的主要沟道材料，并且由于 IGZO 油墨的溶液加工性而进一步受到关注。尽管打印 IGZO 的做法由来已久，已有大约 15 年的历史，但实现完全喷墨打印器件（包括电介质和电极元件）是近期研究的一个里程碑，有可能预示着 IGZO 晶体管进入一个具有成本效益的时代。在本综述中，在介绍 IGZO 之后，重点介绍了目前用于溶液处理 IGZO 器件的不同墨水配方，阐述了相关打印程序的复杂性，并阐述了与此类器件的电介质和电极打印有关的当前研究工作。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

A Comprehensive Guide to Fully Inkjet-Printed IGZO Transistors

查看原文本刊更多论文

A Comprehensive Guide to Fully Inkjet-Printed IGZO Transistors

In this concise review, the recent advancements in fully inkjet-printed (IJP) indium-gallium-zinc-oxide (IGZO) thin-film transistors (TFTs) over the past years are discussed. IGZO has replaced hydrogenated amorphous silicon (a-Si:H) as the primary channel material for liquid-crystal display TFTs and has gained further attention due to the solution processability of IGZO inks. Despite the longstanding practice of printing IGZO for approximately fifteen years, the realization of fully inkjet-printed devices, including both dielectric and electrode components, represents a recent milestone in research, potentially heralding a cost-effective era for IGZO transistors. In this review, following an introductory exposition of IGZO, the focus is on the different ink formulations, currently deployed for solution-processed IGZO devices, the intricacies of the printing procedure involved are delineated, and ongoing research endeavors pertaining to the printing of dielectrics and electrodes for such devices are expounded upon.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

Advanced Electronic Materials NANOSCIENCE & NANOTECHNOLOGYMATERIALS SCIE-MATERIALS SCIENCE, MULTIDISCIPLINARY

CiteScore

11.00

自引率

3.20%

发文量

433

期刊介绍： Advanced Electronic Materials is an interdisciplinary forum for peer-reviewed, high-quality, high-impact research in the fields of materials science, physics, and engineering of electronic and magnetic materials. It includes research on physics and physical properties of electronic and magnetic materials, spintronics, electronics, device physics and engineering, micro- and nano-electromechanical systems, and organic electronics, in addition to fundamental research.