使用紧凑型短路耦合器的宽带 GaN MMIC Doherty 功率放大器

IF 2.2 Q3 COMPUTER SCIENCE, HARDWARE & ARCHITECTURE

IEEE Solid-State Circuits Letters Pub Date : 2024-10-01 DOI:10.1109/LSSC.2024.3471855

Shun Wan;Wenhua Chen;Guansheng Lv;Yuhang Zhang;Xu Shi;Zhenghe Feng

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引用次数: 0

摘要

本文介绍了一种使用紧凑型短路耦合器（CSC）的宽带氮化镓（GaN）单片微波集成电路 Doherty 功率放大器（DPA）。为了提高带宽并减小集成 DPA 的尺寸，峰值输出匹配网络中的传统 $\lambda $ /2 传输线被 CSC 结构所取代。本文提供了详细的理论分析和设计程序。根据所提出的解决方案，设计出了一种 5.1-7.2-GHz 的 DPA，采用的是 0.12- $\mu $ m GaN HEMT 工艺。分数带宽（FBW）为 34.1%。测量结果显示，饱和输出功率为 37.2-39 dBm，整个设计频段的 6 dB 后关漏效率为 38.4%-50.5%，芯片尺寸为 2.6 美元乘 2.6 毫米。在 100 MHz 单载波 64 QAM 调制信号和 6 dB 峰均功率比 (PAPR) 激励下，邻道功率比 (ACPR) 优于数字预失真 (DPD) 下的 -45 dBc。

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Broadband GaN MMIC Doherty Power Amplifier Using Compact Short-Circuited Coupler

In this letter, a broadband gallium nitride (GaN) monolithic microwave integrated circuit Doherty power amplifier (DPA) using a compact short-circuited coupler (CSC) is presented. To enhance the bandwidth and reduce the size of integrated DPA, the conventional

$\lambda $

/2 transmission line in the peaking output matching network is replaced by the CSC structure. Detailed theoretical analysis and design procedures are provided. Based on the proposed solution, a 5.1–7.2-GHz DPA is designed using a 0.12-

$\mu $

m GaN HEMT process. The fractional bandwidth (FBW) is 34.1%. The measurement results show a saturated output power of 37.2–39 dBm and a 6-dB back-off drain efficiency of 38.4%–50.5% across the design bands with a chip size of

$2.6\times 2$

.6 mm. The adjacent channel power ratio (ACPR) under 100-MHz single-carrier 64 QAM modulation signal with a 6-dB peak-to-average power ratio (PAPR) excitation is better than −45 dBc with digital predistortion (DPD).

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来源期刊

IEEE Solid-State Circuits Letters Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

3.70%

发文量