溶液加工氧化物薄膜中的量子约束效应与薄膜晶体管特性之间的相关性

IF 2 3区工程技术 Q3 ENGINEERING, ELECTRICAL & ELECTRONIC

IEEE Journal of the Electron Devices Society Pub Date : 2024-09-26 DOI:10.1109/JEDS.2024.3468300

Jinyeong Lee;Jaewook Jeong

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引用次数: 0

摘要

本文比较分析了溶液法无定形氧化锌以及相关化合物 InZnO 和 GaZnO 薄膜的光致发光特性。根据前驱体溶液摩尔浓度的不同，ZnO 薄膜可观察到 382.4 nm 至 384.8 nm 的 PL 发射峰。聚光发射峰与薄膜的表面形貌密切相关，当存在孤立的纳米级量子点结构颗粒时，聚光发射峰清晰可见，这导致了氧化锌和氧化镓薄膜的量子束缚效应。当形成均匀的薄膜时，由于电学和形态连通性的增加，PL 发射峰消失了，这表明 PL 发射峰的分析可用于评估溶液加工氧化物基材料的薄膜质量和薄膜晶体管（TFT）的性能。

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Correlation Between Quantum Confinement Effect and Characteristics of Thin-Film Transistors in Solution-Processed Oxide-Based Thin-Films

In this paper, the photoluminescence characteristics of solution-processed amorphous ZnO and related compounds of InZnO and GaZnO thin films were comparatively analyzed. Depending on the molarity of the precursor solution, PL emission peaks ranging from 382.4 nm to 384.8 nm were observed for the ZnO thin films. The PL emission peaks were closely related to the surface morphology of the thin films, which were clearly observed when isolated, nano-sized particles of quantum dot structure were present, leading to quantum confinement effect in the ZnO and GaZnO thin films. When uniform thin films formed, the PL emission peaks disappeared due to the increase of electrical and morphological connectivity, which reveals that the analysis of PL emission peak can be used to evaluate the film quality and the performance of thin-film transistors (TFTs) in solution-processed oxide-based materials.

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来源期刊

IEEE Journal of the Electron Devices Society Biochemistry, Genetics and Molecular Biology-Biotechnology

CiteScore

5.20

自引率

4.30%

发文量

124

审稿时长

9 weeks

期刊介绍： The IEEE Journal of the Electron Devices Society (J-EDS) is an open-access, fully electronic scientific journal publishing papers ranging from fundamental to applied research that are scientifically rigorous and relevant to electron devices. The J-EDS publishes original and significant contributions relating to the theory, modelling, design, performance, and reliability of electron and ion integrated circuit devices and interconnects, involving insulators, metals, organic materials, micro-plasmas, semiconductors, quantum-effect structures, vacuum devices, and emerging materials with applications in bioelectronics, biomedical electronics, computation, communications, displays, microelectromechanics, imaging, micro-actuators, nanodevices, optoelectronics, photovoltaics, power IC''s, and micro-sensors. Tutorial and review papers on these subjects are, also, published. And, occasionally special issues with a collection of papers on particular areas in more depth and breadth are, also, published. J-EDS publishes all papers that are judged to be technically valid and original.