{"title":"铜互钙对原始硒化锡热电性能的影响","authors":"Satendrasinh Bharthaniya, Mahesh Chaudhari, Ajay Agarwal, Kailash Chaudhari, Sunil Chaki","doi":"10.1002/crat.202400115","DOIUrl":null,"url":null,"abstract":"<p>Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X-ray, X-ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m<sup>−1</sup> at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK<sup>−1</sup>, that decreased by copper doping to 0.44 W mK<sup>−1</sup> at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K<sup>−1</sup> respectively at 310 K that confirm the p-type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.005 and 0.02 Volt<sup>−1</sup> respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.017 and 0.07 Volt<sup>−1</sup> respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.</p>","PeriodicalId":48935,"journal":{"name":"Crystal Research and Technology","volume":"59 10","pages":""},"PeriodicalIF":1.5000,"publicationDate":"2024-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide\",\"authors\":\"Satendrasinh Bharthaniya, Mahesh Chaudhari, Ajay Agarwal, Kailash Chaudhari, Sunil Chaki\",\"doi\":\"10.1002/crat.202400115\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"<p>Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X-ray, X-ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m<sup>−1</sup> at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK<sup>−1</sup>, that decreased by copper doping to 0.44 W mK<sup>−1</sup> at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K<sup>−1</sup> respectively at 310 K that confirm the p-type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.005 and 0.02 Volt<sup>−1</sup> respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 10<sup>8</sup> µV mK<sup>−2</sup>, 0.017 and 0.07 Volt<sup>−1</sup> respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.</p>\",\"PeriodicalId\":48935,\"journal\":{\"name\":\"Crystal Research and Technology\",\"volume\":\"59 10\",\"pages\":\"\"},\"PeriodicalIF\":1.5000,\"publicationDate\":\"2024-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Crystal Research and Technology\",\"FirstCategoryId\":\"88\",\"ListUrlMain\":\"https://onlinelibrary.wiley.com/doi/10.1002/crat.202400115\",\"RegionNum\":4,\"RegionCategory\":\"材料科学\",\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"Q3\",\"JCRName\":\"Chemistry\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Crystal Research and Technology","FirstCategoryId":"88","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/crat.202400115","RegionNum":4,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"Chemistry","Score":null,"Total":0}
引用次数: 0
摘要
原始硒化锡(SnSe)和掺杂铜(Cu)的硒化锡单晶体是通过直接蒸汽传输技术生长出来的。对生长出的晶体进行的能量色散 X 射线、X 射线衍射和拉曼光谱分析表明,单相掺杂的硒化锡具有优选的化学计量学特性。在 310 K 时,SnSe 和掺铜 SnSe 的电导率分别为 24.24 和 106.06 S m-1,并随着温度的升高而增加。利用霍尔效应评估了生长单晶的载流子浓度。原始 SnSe 的晶格热导率为 0.61 W mK-1,掺铜后在 310 K 时降至 0.44 W mK-1,随着温度升高至 483 K,两种晶体的热导率均有所下降。生长的 SnSe 和掺铜 SnSe 的塞贝克系数均为正值,在 310 K 时的值分别为 536.44 和 492.90 µV K-1,这证实了其 p 型半导体性质。生长的原始 SnSe 的功率因数、优点系数和热电兼容系数分别为 0.25 × 108 µV mK-2、0.005 和 0.02 伏特-1,而掺铜的 SnSe 则有所提高,在 310 K 时分别为 0.08 × 108 µV mK-2、0.017 和 0.07 伏特-1。
Copper Intercalation Effect on Thermoelectric Performance of Pristine Tin Selenide
Pristine tin selenide (SnSe) and copper (Cu) doped SnSe single crystals are grown by direct vapour transport technique. The energy dispersive X-ray, X-ray diffraction and Raman spectroscopic analysis of grown crystals show preferred stoichiometry having a single phase othorhombic SnSe. The electrical conductivity of SnSe and Cu doped SnSe are 24.24 and 106.06 S m−1 at 310 K respectively which increase as temperature increases. Carrier concentration of grown single crystals are evaluated by the Hall effect. Lattice thermal conductivity of pristine SnSe is 0.61 W mK−1, that decreased by copper doping to 0.44 W mK−1 at 310 K and for both the crystals it shows decrement as temperature increases to 483 K. Seebeck coefficient of the grown SnSe and Cu doped SnSe are positive and obtained values are 536.44 and 492.90 µV K−1 respectively at 310 K that confirm the p-type semiconducting nature. Power factor, Figure of merit and thermoelectric compatibility factor of grown pristine SnSe is 0.25 × 108 µV mK−2, 0.005 and 0.02 Volt−1 respectively and shows improvement in Cu doped SnSe, i.e., 0.08 × 108 µV mK−2, 0.017 and 0.07 Volt−1 respectively at 310 K. This shows Cu doping in SnSe makes it an effective thermoelectric device contender.
期刊介绍:
The journal Crystal Research and Technology is a pure online Journal (since 2012).
Crystal Research and Technology is an international journal examining all aspects of research within experimental, industrial, and theoretical crystallography. The journal covers the relevant aspects of
-crystal growth techniques and phenomena (including bulk growth, thin films)
-modern crystalline materials (e.g. smart materials, nanocrystals, quasicrystals, liquid crystals)
-industrial crystallisation
-application of crystals in materials science, electronics, data storage, and optics
-experimental, simulation and theoretical studies of the structural properties of crystals
-crystallographic computing